TY - JOUR
T1 - Bonding structure of silicon oxynitride grown by plasma-enhanced chemical vapor deposition
AU - Wong, C. K.
AU - Wong, Hei
AU - Filip, V.
AU - Chung, P. S.
PY - 2007/5/17
Y1 - 2007/5/17
N2 - Silicon oxynitride films were prepared by plasma enhanced chemical vapor deposition (PECVD) with N2O, NH3, and SiH4 precursors. X-ray photoelectron spectroscopy (XPS) and refractive index characterization showed that different film compositions, from silicon dioxide to stoichiometric silicon nitride, are achievable by tuning the flow rate of nitrous oxide in a mixture of precursor gases. The refractive index of silicon oxynitride (SiON) films is linearly proportional to the nitrogen content of these films, making these films a desirable candidate for optical waveguide applications. In addition, a detailed compositional analysis of the oxynitride films was conducted by XPS. By the Gaussian deconvolution of Si 2p XPS spectra, we confirmed that the structure of PECVD silicon oxynitride films should be in the form of the random bonding and the films should have homogenous optical and electrical characteristics. © 2007 The Japan Society of Applied Physics.
AB - Silicon oxynitride films were prepared by plasma enhanced chemical vapor deposition (PECVD) with N2O, NH3, and SiH4 precursors. X-ray photoelectron spectroscopy (XPS) and refractive index characterization showed that different film compositions, from silicon dioxide to stoichiometric silicon nitride, are achievable by tuning the flow rate of nitrous oxide in a mixture of precursor gases. The refractive index of silicon oxynitride (SiON) films is linearly proportional to the nitrogen content of these films, making these films a desirable candidate for optical waveguide applications. In addition, a detailed compositional analysis of the oxynitride films was conducted by XPS. By the Gaussian deconvolution of Si 2p XPS spectra, we confirmed that the structure of PECVD silicon oxynitride films should be in the form of the random bonding and the films should have homogenous optical and electrical characteristics. © 2007 The Japan Society of Applied Physics.
KW - Bonding structure
KW - PECVD
KW - Random bonding
KW - Silicon oxynitride
KW - X-ray photoelectron spectroscopy
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U2 - 10.1143/JJAP.46.3202
DO - 10.1143/JJAP.46.3202
M3 - RGC 21 - Publication in refereed journal
SN - 0021-4922
VL - 46
SP - 3202
EP - 3205
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 5 B
ER -