Bonding and optical contrast in phase change memory materials

J. Robertson; B. Huang

doi:10.1002/pssb.201200361

Bonding and optical contrast in phase change memory materials

J. Robertson, B. Huang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

8 Citations (Scopus)

Abstract

The large optical contrast between crystalline and amorphous phases of phase change memory materials is shown to arise from a large increase in the optical matrix elements which occurs when resonant bonding is present. Resonance requires aligned p orbitals, and is lost in the amorphous phases, irrespective of coordination number. Transitions in resonance can be engineered by superlattice structures. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	1867-1873
Journal	Physica Status Solidi (B) Basic Research
Volume	249
Issue number	10
DOIs	https://doi.org/10.1002/pssb.201200361
Publication status	Published - Oct 2012
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

Amorphous chalcogenides
Electronic structure
Modelling
Phase change materials

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@article{b95361a4f12549b48b03da026f6601b0,

title = "Bonding and optical contrast in phase change memory materials",

abstract = "The large optical contrast between crystalline and amorphous phases of phase change memory materials is shown to arise from a large increase in the optical matrix elements which occurs when resonant bonding is present. Resonance requires aligned p orbitals, and is lost in the amorphous phases, irrespective of coordination number. Transitions in resonance can be engineered by superlattice structures. {\textcopyright} 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

keywords = "Amorphous chalcogenides, Electronic structure, Modelling, Phase change materials",

author = "J. Robertson and B. Huang",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2012",

month = oct,

doi = "10.1002/pssb.201200361",

language = "English",

volume = "249",

pages = "1867--1873",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "John Wiley & Sons",

number = "10",

}

TY - JOUR

T1 - Bonding and optical contrast in phase change memory materials

AU - Robertson, J.

AU - Huang, B.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2012/10

Y1 - 2012/10

N2 - The large optical contrast between crystalline and amorphous phases of phase change memory materials is shown to arise from a large increase in the optical matrix elements which occurs when resonant bonding is present. Resonance requires aligned p orbitals, and is lost in the amorphous phases, irrespective of coordination number. Transitions in resonance can be engineered by superlattice structures. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - The large optical contrast between crystalline and amorphous phases of phase change memory materials is shown to arise from a large increase in the optical matrix elements which occurs when resonant bonding is present. Resonance requires aligned p orbitals, and is lost in the amorphous phases, irrespective of coordination number. Transitions in resonance can be engineered by superlattice structures. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - Amorphous chalcogenides

KW - Electronic structure

KW - Modelling

KW - Phase change materials

UR - http://www.scopus.com/inward/record.url?scp=84867222861&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84867222861&origin=recordpage

U2 - 10.1002/pssb.201200361

DO - 10.1002/pssb.201200361

M3 - RGC 21 - Publication in refereed journal

SN - 0370-1972

VL - 249

SP - 1867

EP - 1873

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 10

ER -

Bonding and optical contrast in phase change memory materials

Abstract

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Research Keywords

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