Bonding and band offset in N2O-grown oxynitride

V. A. Gritsenko; Hei Wong; W. M. Kwok; J. B. Xu

doi:10.1116/1.1540989

Bonding and band offset in N₂O-grown oxynitride

V. A. Gritsenko, Hei Wong, W. M. Kwok, J. B. Xu

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

30 Citations (Scopus)

Abstract

The oxynitride prepared by N₂ oxidation was studied by XPS. It was found that the oxynitride is essentially a thermal oxide. The nitrogen content is very low, and the nitrogen atoms create the Si₃N species at the Si/dielectric interface. The valence-and conduction-band offsets of N₂O oxynitride are the same as that at the Si/SiO₂ interface. Removal of Si-Si bonds and P_b centers during nitridation occurred and explained by the creation of Si-N bonds.

Original language	English
Pages (from-to)	241-245
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
DOIs	https://doi.org/10.1116/1.1540989
Publication status	Published - Jan 2003

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abstract = "The oxynitride prepared by N2 oxidation was studied by XPS. It was found that the oxynitride is essentially a thermal oxide. The nitrogen content is very low, and the nitrogen atoms create the Si3N species at the Si/dielectric interface. The valence-and conduction-band offsets of N2O oxynitride are the same as that at the Si/SiO2 interface. Removal of Si-Si bonds and Pb centers during nitridation occurred and explained by the creation of Si-N bonds.",

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AU - Gritsenko, V. A.

AU - Wong, Hei

AU - Kwok, W. M.

AU - Xu, J. B.

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N2 - The oxynitride prepared by N2 oxidation was studied by XPS. It was found that the oxynitride is essentially a thermal oxide. The nitrogen content is very low, and the nitrogen atoms create the Si3N species at the Si/dielectric interface. The valence-and conduction-band offsets of N2O oxynitride are the same as that at the Si/SiO2 interface. Removal of Si-Si bonds and Pb centers during nitridation occurred and explained by the creation of Si-N bonds.

AB - The oxynitride prepared by N2 oxidation was studied by XPS. It was found that the oxynitride is essentially a thermal oxide. The nitrogen content is very low, and the nitrogen atoms create the Si3N species at the Si/dielectric interface. The valence-and conduction-band offsets of N2O oxynitride are the same as that at the Si/SiO2 interface. Removal of Si-Si bonds and Pb centers during nitridation occurred and explained by the creation of Si-N bonds.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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