Bonding and band offset in N2O-grown oxynitride

V. A. Gritsenko; Hei Wong; W. M. Kwok; J. B. Xu

doi:10.1116/1.1540989

Author(s)

V. A. Gritsenko
Hei Wong
W. M. Kwok
J. B. Xu

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Pages (from-to)	241-245
Journal / Publication	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
Publication status	Published - Jan 2003

Link(s)

DOI	DOI https://doi.org/10.1116/1.1540989 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0037207705&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(7c0f466e-6f40-4788-99ce-31e6bab1cf65).html

Abstract

The oxynitride prepared by N₂ oxidation was studied by XPS. It was found that the oxynitride is essentially a thermal oxide. The nitrogen content is very low, and the nitrogen atoms create the Si₃N species at the Si/dielectric interface. The valence-and conduction-band offsets of N₂O oxynitride are the same as that at the Si/SiO₂ interface. Removal of Si-Si bonds and P_b centers during nitridation occurred and explained by the creation of Si-N bonds.

Citation Format(s)

[ RIS ] [ BibTeX ]

Bonding and band offset in N₂O-grown oxynitride. / Gritsenko, V. A.; Wong, Hei; Kwok, W. M. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 1 SPEC., 01.2003, p. 241-245.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Gritsenko, VA, Wong, H, Kwok, WM & Xu, JB 2003, 'Bonding and band offset in N₂O-grown oxynitride', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 1 SPEC., pp. 241-245. https://doi.org/10.1116/1.1540989

Gritsenko, V. A., Wong, H., Kwok, W. M., & Xu, J. B. (2003). Bonding and band offset in N₂O-grown oxynitride. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(1 SPEC.), 241-245. https://doi.org/10.1116/1.1540989

Gritsenko VA, Wong H, Kwok WM, Xu JB. Bonding and band offset in N₂O-grown oxynitride. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 Jan;21(1 SPEC.):241-245. doi: 10.1116/1.1540989

Gritsenko, V. A. ; Wong, Hei ; Kwok, W. M. et al. / Bonding and band offset in N₂O-grown oxynitride. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 ; Vol. 21, No. 1 SPEC. pp. 241-245.