Blocking reactions between indium-tin oxide and poly (3,4-ethylene dioxythiophene) : poly(styrene sulphonate) with a self-assembly monolayer

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • K. W. Wong
  • Y. Luo
  • K. Y. Wong
  • W. M. Lau
  • K. H. Low
  • H. F. Chow
  • Z. Q. Gao
  • W. L. Yeung
  • C. C. Chang

Detail(s)

Original languageEnglish
Pages (from-to)2788-2790
Journal / PublicationApplied Physics Letters
Volume80
Issue number15
Publication statusPublished - 15 Apr 2002
Externally publishedYes

Abstract

In the fabrication of polymeric electroluminescent devices with indium-tin oxide (ITO) as anode, indium contamination of the polymers can greatly degrade the device performance. In the present study, we have used x-ray photoelectron spectroscopy to measure indium incorporation in poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate), referred to as PEDOT:PSS, which were spincast on bare ITO and encapsulated ITO. We found that the deposition of a self-assembled monolayer of alkylsiloxanes on ITO prior to spincasting PEDOT:PSS was effective and practical in blocking the reactions between ITO and PEDOT:PSS. © 2002 American Institute of Physics.

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Citation Format(s)

Blocking reactions between indium-tin oxide and poly (3,4-ethylene dioxythiophene) : poly(styrene sulphonate) with a self-assembly monolayer. / Wong, K. W.; Yip, H. L.; Luo, Y. et al.

In: Applied Physics Letters, Vol. 80, No. 15, 15.04.2002, p. 2788-2790.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review