Bi-induced band gap reduction in epitaxial InSbBi alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • M. K. Rajpalke
  • W. M. Linhart
  • M. Birkett
  • J. Alaria
  • J. J. Bomphrey
  • S. Sallis
  • L. F J Piper
  • T. S. Jones
  • M. J. Ashwin
  • T. D. Veal

Detail(s)

Original languageEnglish
Article number212101
Journal / PublicationApplied Physics Letters
Volume105
Issue number21
Publication statusPublished - 24 Nov 2014
Externally publishedYes

Abstract

The properties of molecular beam epitaxy-grown InSb1-xBix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ∼35 meV/%Bi.

Citation Format(s)

Bi-induced band gap reduction in epitaxial InSbBi alloys. / Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; Birkett, M.; Alaria, J.; Bomphrey, J. J.; Sallis, S.; Piper, L. F J; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

In: Applied Physics Letters, Vol. 105, No. 21, 212101, 24.11.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review