Bi-induced band gap reduction in epitaxial InSbBi alloys

M. K. Rajpalke; W. M. Linhart; K. M. Yu; M. Birkett; J. Alaria; J. J. Bomphrey; S. Sallis; L. F J Piper; T. S. Jones; M. J. Ashwin; T. D. Veal

doi:10.1063/1.4902442

Author(s)

M. K. Rajpalke
W. M. Linhart
M. Birkett
J. Alaria
J. J. Bomphrey
S. Sallis
L. F J Piper
T. S. Jones
M. J. Ashwin
T. D. Veal

Detail(s)

Original language	English
Article number	212101
Journal / Publication	Applied Physics Letters
Volume	105
Issue number	21
Publication status	Published - 24 Nov 2014
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.4902442 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84912118955&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(514a8749-fa7a-4c1c-9540-a89ee1547931).html

Abstract

The properties of molecular beam epitaxy-grown InSb_1-xBi_x alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb_0.976Bi_0.024, a reduction of ∼35 meV/%Bi.

Citation Format(s)

[ RIS ] [ BibTeX ]

Bi-induced band gap reduction in epitaxial InSbBi alloys. / Rajpalke, M. K.; Linhart, W. M.; Yu, K. M. et al.

In: Applied Physics Letters, Vol. 105, No. 21, 212101, 24.11.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Rajpalke, MK, Linhart, WM, Yu, KM, Birkett, M, Alaria, J, Bomphrey, JJ, Sallis, S, Piper, LFJ, Jones, TS, Ashwin, MJ & Veal, TD 2014, 'Bi-induced band gap reduction in epitaxial InSbBi alloys', Applied Physics Letters, vol. 105, no. 21, 212101. https://doi.org/10.1063/1.4902442

Rajpalke, M. K., Linhart, W. M., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., Sallis, S., Piper, L. F. J., Jones, T. S., Ashwin, M. J., & Veal, T. D. (2014). Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, 105(21), [212101]. https://doi.org/10.1063/1.4902442

Rajpalke MK, Linhart WM, Yu KM, Birkett M, Alaria J, Bomphrey JJ et al. Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters. 2014 Nov 24;105(21):212101. doi: 10.1063/1.4902442

Rajpalke, M. K. ; Linhart, W. M. ; Yu, K. M. et al. / Bi-induced band gap reduction in epitaxial InSbBi alloys. In: Applied Physics Letters. 2014 ; Vol. 105, No. 21.