Biaxially strained germanium micro-dot array by hydrogen ion implantation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

  • Pengfei Jia
  • Miao Zhang
  • Jun Ma
  • Linxi Dong
  • Gaofeng Wang
  • Zhongying Xue
  • Zengfeng Di
  • Xi Wang

Detail(s)

Original languageEnglish
Pages (from-to)248-252
Journal / PublicationSurface and Coatings Technology
Volume365
Early online date27 Jul 2018
Publication statusPublished - 15 May 2019

Conference

Title14th International Conference on Plasma-Based Ion Implantation and Deposition (PBII&D 2017)
Location
PlaceChina
CityShanghai
Period17 - 20 October 2017

Abstract

Although strain engineering is an effective method to modify the bandgap of germanium for germanium-based microelectronic, the introduction of biaxial tensile strain with a particular pattern to germanium is challenging. Herein, a facile approach to produce biaxially strained germanium micro-dot arrays by hydrogen ion implantation is described. By changing the ion implantation and annealing conditions, the morphology of the micro-dots can be optimized and the biaxially tensile strain can be tuned to a maximum value of 0.6%. This method which is compatible with mainstream complementary metal-oxide-semiconductor processing can be extended to strain engineering in wafer scale.

Research Area(s)

  • Germanium, Ion implantation, Micro-dots, Strain

Citation Format(s)

Biaxially strained germanium micro-dot array by hydrogen ion implantation. / Jia, Pengfei; Zhang, Miao; Ma, Jun; Dong, Linxi; Wang, Gaofeng; Chu, Paul K.; Xue, Zhongying; Di, Zengfeng; Wang, Xi.

In: Surface and Coatings Technology, Vol. 365, 15.05.2019, p. 248-252.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review