Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)763-767
Journal / PublicationJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number3
Publication statusPublished - May 1999

Abstract

Bias-assisted etching of diamond films was performed in a microwave plasma chemical vapor deposition system. Hydrogen, hydrogen/oxygen, and hydrogen/argon mixtures were used as reactant gases. The effects of both the reactant gas compositions and applied substrate bias on the etching rate, surface morphology, and phase variation were investigated by scanning electron microscopy and Raman spectroscopy. The contribution of ions of different reactant gases to the etching of diamond films was discussed. © 1999 American Vacuum Society.

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