Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas

W. J. Zhang; C. Sun; I. Bello; C. S. Lee; S. T. Lee

doi:10.1116/1.581646

Author(s)

W. J. Zhang
C. Sun
I. Bello
C. S. Lee
S. T. Lee

Related Research Unit(s)

Centre of Super-Diamond and Advanced Films

Detail(s)

Original language	English
Pages (from-to)	763-767
Journal / Publication	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	17
Issue number	3
Publication status	Published - May 1999

Link(s)

DOI	DOI https://doi.org/10.1116/1.581646 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0000112526&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(5cef5933-2526-4ae0-8c12-3a08f5dd460d).html

Abstract

Bias-assisted etching of diamond films was performed in a microwave plasma chemical vapor deposition system. Hydrogen, hydrogen/oxygen, and hydrogen/argon mixtures were used as reactant gases. The effects of both the reactant gas compositions and applied substrate bias on the etching rate, surface morphology, and phase variation were investigated by scanning electron microscopy and Raman spectroscopy. The contribution of ions of different reactant gases to the etching of diamond films was discussed. © 1999 American Vacuum Society.

Citation Format(s)

[ RIS ] [ BibTeX ]

Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas. / Zhang, W. J.; Sun, C.; Bello, I. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 3, 05.1999, p. 763-767.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Zhang, WJ, Sun, C, Bello, I, Lee, CS & Lee, ST 1999, 'Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 17, no. 3, pp. 763-767. https://doi.org/10.1116/1.581646

Zhang, W. J., Sun, C., Bello, I., Lee, C. S., & Lee, S. T. (1999). Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 17(3), 763-767. https://doi.org/10.1116/1.581646

Zhang WJ, Sun C, Bello I, Lee CS, Lee ST. Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1999 May;17(3):763-767. doi: 10.1116/1.581646

Zhang, W. J. ; Sun, C. ; Bello, I. et al. / Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1999 ; Vol. 17, No. 3. pp. 763-767.