Bi2SElectron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

9 Scopus Citations
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Author(s)

  • Ji Yang
  • Yifei Lv
  • Ziyang He
  • Binbin Wang
  • Shiwu Chen
  • Feng Xiao
  • Huicheng Hu
  • Mengxuan Yu
  • Huan Liu
  • Xinzheng Lan
  • Haisheng Song
  • Jiang Tang

Detail(s)

Original languageEnglish
Pages (from-to)2226–2233
Number of pages8
Journal / PublicationACS Photonics
Volume10
Issue number7
Online published9 Jan 2023
Publication statusPublished - 19 Jul 2023

Abstract

Infrared photodetectors (PDs) based on epitaxial semiconductors occupy the majority of the market, but their high cost from material growth and device integration limits their application fields. Colloidal quantum dots (CQDs) provide a high potential candidate for infrared PDs due to their unique infrared sensitivity, tunable physical and chemical properties, and good compatibility with readout integration circuits. In particular, HgTe CQD PDs have demonstrated a wide detection range from short-wave to long-wave infrared. Although significant progress has been achieved in HgTe CQD infrared PDs, they are still in the primary stage of QD synthesis and prototype device fabrication. Here, we develop a new p-i-n photodiode from the traditional p-i device structure. Bismuth sulfide (Bi2S3) films were adopted as the electron transport layer, which could favor uniform absorber deposition, superior charge extraction, and suppressed interfacial loss. The Bi2S3-based photodiodes have achieved a room-temperature dark current density as low as 1.6 × 10-5 A/cm2 at -400 mV. Furthermore, their specific detectivity (D*) achieves ∼1011 Jones at room temperature.

Research Area(s)

  • dark current density, electron transport layer, HgTe QDs, infrared photodetectors

Bibliographic Note

Research Unit(s) information for this publication is provided by the author(s) concerned.

Citation Format(s)

Bi2SElectron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors. / Yang, Ji; Lv, Yifei; He, Ziyang et al.
In: ACS Photonics, Vol. 10, No. 7, 19.07.2023, p. 2226–2233.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review