Bi-induced band gap reduction in epitaxial InSbBi alloys

M. K. Rajpalke; W. M. Linhart; K. M. Yu; M. Birkett; J. Alaria; J. J. Bomphrey; S. Sallis; L. F J Piper; T. S. Jones; M. J. Ashwin; T. D. Veal

doi:10.1063/1.4902442

Bi-induced band gap reduction in epitaxial InSbBi alloys

M. K. Rajpalke, W. M. Linhart, K. M. Yu, M. Birkett, J. Alaria, J. J. Bomphrey, S. Sallis, L. F J Piper, T. S. Jones, M. J. Ashwin, T. D. Veal

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

The properties of molecular beam epitaxy-grown InSb_1-xBi_x alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb_0.976Bi_0.024, a reduction of ∼35 meV/%Bi.

Original language	English
Article number	212101
Journal	Applied Physics Letters
Volume	105
Issue number	21
DOIs	https://doi.org/10.1063/1.4902442
Publication status	Published - 24 Nov 2014
Externally published	Yes

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title = "Bi-induced band gap reduction in epitaxial InSbBi alloys",

abstract = "The properties of molecular beam epitaxy-grown InSb1-xBix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 {\AA}. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ∼35 meV/%Bi.",

author = "Rajpalke, {M. K.} and Linhart, {W. M.} and Yu, {K. M.} and M. Birkett and J. Alaria and Bomphrey, {J. J.} and S. Sallis and Piper, {L. F J} and Jones, {T. S.} and Ashwin, {M. J.} and Veal, {T. D.}",

year = "2014",

month = nov,

day = "24",

doi = "10.1063/1.4902442",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Bi-induced band gap reduction in epitaxial InSbBi alloys

AU - Rajpalke, M. K.

AU - Linhart, W. M.

AU - Yu, K. M.

AU - Birkett, M.

AU - Alaria, J.

AU - Bomphrey, J. J.

AU - Sallis, S.

AU - Piper, L. F J

AU - Jones, T. S.

AU - Ashwin, M. J.

AU - Veal, T. D.

PY - 2014/11/24

Y1 - 2014/11/24

N2 - The properties of molecular beam epitaxy-grown InSb1-xBix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ∼35 meV/%Bi.

AB - The properties of molecular beam epitaxy-grown InSb1-xBix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ∼35 meV/%Bi.

UR - http://www.scopus.com/inward/record.url?scp=84912118955&partnerID=8YFLogxK

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U2 - 10.1063/1.4902442

DO - 10.1063/1.4902442

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212101

ER -

Bi-induced band gap reduction in epitaxial InSbBi alloys

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