Bi flux-dependent MBE growth of GaSbBi alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • M. K. Rajpalke
  • W. M. Linhart
  • T. S. Jones
  • M. J. Ashwin
  • T. D. Veal

Detail(s)

Original languageEnglish
Pages (from-to)241-244
Journal / PublicationJournal of Crystal Growth
Volume425
Online published5 Mar 2015
Publication statusPublished - 1 Sep 2015

Link(s)

Abstract

The incorporation of Bi in GaSb1-xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h-1). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0

Research Area(s)

  • A1. High resolution X-ray diffraction, A3. Molecular beam epitaxy, B1. Antimonides, B1. Bismuth compounds, B1. Gallium compounds, B2. Semiconducting III-V materials

Citation Format(s)

Bi flux-dependent MBE growth of GaSbBi alloys. / Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 241-244.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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