Bi flux-dependent MBE growth of GaSbBi alloys
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 241-244 |
Journal / Publication | Journal of Crystal Growth |
Volume | 425 |
Online published | 5 Mar 2015 |
Publication status | Published - 1 Sept 2015 |
Link(s)
DOI | DOI |
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Attachment(s) | Documents
Publisher's Copyright Statement
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Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-84979959226&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(1aea6efb-6b7a-4a9f-afcd-9471eb89ce2b).html |
Abstract
The incorporation of Bi in GaSb1-xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h-1). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0
Research Area(s)
- A1. High resolution X-ray diffraction, A3. Molecular beam epitaxy, B1. Antimonides, B1. Bismuth compounds, B1. Gallium compounds, B2. Semiconducting III-V materials
Citation Format(s)
Bi flux-dependent MBE growth of GaSbBi alloys. / Rajpalke, M. K.; Linhart, W. M.; Yu, K. M. et al.
In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 241-244.
In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 241-244.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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