Bi flux-dependent MBE growth of GaSbBi alloys

M. K. Rajpalke; W. M. Linhart; K. M. Yu; T. S. Jones; M. J. Ashwin; T. D. Veal

doi:10.1016/j.jcrysgro.2015.02.093

Bi flux-dependent MBE growth of GaSbBi alloys

M. K. Rajpalke, W. M. Linhart, K. M. Yu, T. S. Jones, M. J. Ashwin, T. D. Veal^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

The incorporation of Bi in GaSb_1-xBi_x alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h^-1). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0

Original language	English
Pages (from-to)	241-244
Journal	Journal of Crystal Growth
Volume	425
Online published	5 Mar 2015
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.093
Publication status	Published - 1 Sept 2015

Research Keywords

A1. High resolution X-ray diffraction
A3. Molecular beam epitaxy
B1. Antimonides
B1. Bismuth compounds
B1. Gallium compounds
B2. Semiconducting III-V materials

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This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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title = "Bi flux-dependent MBE growth of GaSbBi alloys",

abstract = "The incorporation of Bi in GaSb1-xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h-1). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0",

keywords = "A1. High resolution X-ray diffraction, A3. Molecular beam epitaxy, B1. Antimonides, B1. Bismuth compounds, B1. Gallium compounds, B2. Semiconducting III-V materials",

author = "Rajpalke, {M. K.} and Linhart, {W. M.} and Yu, {K. M.} and Jones, {T. S.} and Ashwin, {M. J.} and Veal, {T. D.}",

year = "2015",

month = sep,

day = "1",

doi = "10.1016/j.jcrysgro.2015.02.093",

language = "English",

volume = "425",

pages = "241--244",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Bi flux-dependent MBE growth of GaSbBi alloys

AU - Rajpalke, M. K.

AU - Linhart, W. M.

AU - Yu, K. M.

AU - Jones, T. S.

AU - Ashwin, M. J.

AU - Veal, T. D.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The incorporation of Bi in GaSb1-xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h-1). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0

AB - The incorporation of Bi in GaSb1-xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h-1). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0

KW - A1. High resolution X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Antimonides

KW - B1. Bismuth compounds

KW - B1. Gallium compounds

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=84979959226&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84979959226&origin=recordpage

U2 - 10.1016/j.jcrysgro.2015.02.093

DO - 10.1016/j.jcrysgro.2015.02.093

M3 - RGC 21 - Publication in refereed journal

SN - 0022-0248

VL - 425

SP - 241

EP - 244

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Bi flux-dependent MBE growth of GaSbBi alloys

Abstract

Research Keywords

Publisher's Copyright Statement

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