Beta-detected NMR study of the local magnetic field in epitaxial GaAs: Mn

Q. Song; K. H. Chow; R. I. Miller; I. Fan; M. D. Hossain; R. F. Kiefl; S. R. Kreitzman; C. D P Levy; T. J. Parolin; M. R. Pearson; Z. Salman; H. Saadaoui; M. Smadella; D. Wang; K. M. Yu; X. Liu; J. K. Furdyna; W. A. MacFarlane

doi:10.1016/j.physb.2008.11.143

Beta-detected NMR study of the local magnetic field in epitaxial GaAs: Mn

Q. Song
, K. H. Chow
, R. I. Miller
, I. Fan
, M. D. Hossain
, R. F. Kiefl
, S. R. Kreitzman
, C. D P Levy
, T. J. Parolin
, M. R. Pearson
, Z. Salman
, H. Saadaoui
, M. Smadella
, D. Wang
, K. M. Yu
, X. Liu
, J. K. Furdyna
, W. A. MacFarlane

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

3 Citations (Scopus)

Abstract

A low energy beam of spin polarized ⁸Li⁺ has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed. © 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	892-895
Journal	Physica B: Condensed Matter
Volume	404
Issue number	5-7
DOIs	https://doi.org/10.1016/j.physb.2008.11.143
Publication status	Published - 15 Apr 2009
Externally published	Yes

Research Keywords

Dilute ferromagnetic semiconductor
GaAs:Mn
Low energy muon
Magnetism
Thin films

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10.1016/j.physb.2008.11.143

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Song, Q., Chow, K. H., Miller, R. I., Fan, I., Hossain, M. D., Kiefl, R. F., Kreitzman, S. R., Levy, C. D. P., Parolin, T. J., Pearson, M. R., Salman, Z., Saadaoui, H., Smadella, M., Wang, D., Yu, K. M., Liu, X., Furdyna, J. K., & MacFarlane, W. A. (2009). Beta-detected NMR study of the local magnetic field in epitaxial GaAs: Mn. Physica B: Condensed Matter, 404(5-7), 892-895. https://doi.org/10.1016/j.physb.2008.11.143

@article{761c843edd8e4ab2879b7e7e07f977ab,

title = "Beta-detected NMR study of the local magnetic field in epitaxial GaAs: Mn",

abstract = "A low energy beam of spin polarized 8Li+ has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4\% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

keywords = "Dilute ferromagnetic semiconductor, GaAs:Mn, Low energy muon, Magnetism, Thin films",

author = "Q. Song and Chow, \{K. H.\} and Miller, \{R. I.\} and I. Fan and Hossain, \{M. D.\} and Kiefl, \{R. F.\} and Kreitzman, \{S. R.\} and Levy, \{C. D P\} and Parolin, \{T. J.\} and Pearson, \{M. R.\} and Z. Salman and H. Saadaoui and M. Smadella and D. Wang and Yu, \{K. M.\} and X. Liu and Furdyna, \{J. K.\} and MacFarlane, \{W. A.\}",

year = "2009",

month = apr,

day = "15",

doi = "10.1016/j.physb.2008.11.143",

language = "English",

volume = "404",

pages = "892--895",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "5-7",

}

Song, Q, Chow, KH, Miller, RI, Fan, I, Hossain, MD, Kiefl, RF, Kreitzman, SR, Levy, CDP, Parolin, TJ, Pearson, MR, Salman, Z, Saadaoui, H, Smadella, M, Wang, D, Yu, KM, Liu, X, Furdyna, JK & MacFarlane, WA 2009, 'Beta-detected NMR study of the local magnetic field in epitaxial GaAs: Mn', Physica B: Condensed Matter, vol. 404, no. 5-7, pp. 892-895. https://doi.org/10.1016/j.physb.2008.11.143

TY - JOUR

T1 - Beta-detected NMR study of the local magnetic field in epitaxial GaAs

T2 - Mn

AU - Song, Q.

AU - Chow, K. H.

AU - Miller, R. I.

AU - Fan, I.

AU - Hossain, M. D.

AU - Kiefl, R. F.

AU - Kreitzman, S. R.

AU - Levy, C. D P

AU - Parolin, T. J.

AU - Pearson, M. R.

AU - Salman, Z.

AU - Saadaoui, H.

AU - Smadella, M.

AU - Wang, D.

AU - Yu, K. M.

AU - Liu, X.

AU - Furdyna, J. K.

AU - MacFarlane, W. A.

PY - 2009/4/15

Y1 - 2009/4/15

N2 - A low energy beam of spin polarized 8Li+ has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed. © 2008 Elsevier B.V. All rights reserved.

AB - A low energy beam of spin polarized 8Li+ has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed. © 2008 Elsevier B.V. All rights reserved.

KW - Dilute ferromagnetic semiconductor

KW - GaAs:Mn

KW - Low energy muon

KW - Magnetism

KW - Thin films

UR - https://www.scopus.com/pages/publications/62949229006

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-62949229006&origin=recordpage

U2 - 10.1016/j.physb.2008.11.143

DO - 10.1016/j.physb.2008.11.143

M3 - RGC 21 - Publication in refereed journal

SN - 0921-4526

VL - 404

SP - 892

EP - 895

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 5-7

ER -

Beta-detected NMR study of the local magnetic field in epitaxial GaAs: Mn

Abstract

Research Keywords

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