Bayesian approach to reliability projection for high k dielectric thin films

Wen Luo; Way Kuo; Yue Kuo

doi:10.1109/IRWS.2004.1422771

Bayesian approach to reliability projection for high k dielectric thin films

Wen Luo, Way Kuo, Yue Kuo

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

A Bayesian statistical approach, which is suitable for reliability estimation and projection of high k dielectric thin films and nano devices, was developed. The essential characteristics of a Bayesian approach is the explicit use of probability for quantifying uncertainty in statistical inference. The model proposed for the reliability projection of high k thin films integrates a lifetime distribution and an empirical acceleration function into a Bayesian hierarchical framework. The advantages of applying the Bayesian approach are two-fold. It can properly combine the prior knowledge of SiO ₂ with the new data collected on high k and it uses probability density to model the uncertainty associated with the practical application. © 2004 IEEE

Original language	English
Title of host publication	2004 IEEE International Integrated Reliability Workshop Final Report
Publisher	IEEE
Pages	186-187
ISBN (Print)	0-7803-8517-9
DOIs	https://doi.org/10.1109/IRWS.2004.1422771
Publication status	Published - Oct 2004
Externally published	Yes
Event	2004 IEEE International Integrated Reliability Workshop - South Lake Tahoe, CA, United States Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 IEEE International Integrated Reliability Workshop
Place	United States
City	South Lake Tahoe, CA
Period	18/10/04 → 21/10/04

Access Output

10.1109/IRWS.2004.1422771

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{91290087535441a2a3c563548a865fb1,

title = "Bayesian approach to reliability projection for high k dielectric thin films",

abstract = "A Bayesian statistical approach, which is suitable for reliability estimation and projection of high k dielectric thin films and nano devices, was developed. The essential characteristics of a Bayesian approach is the explicit use of probability for quantifying uncertainty in statistical inference. The model proposed for the reliability projection of high k thin films integrates a lifetime distribution and an empirical acceleration function into a Bayesian hierarchical framework. The advantages of applying the Bayesian approach are two-fold. It can properly combine the prior knowledge of SiO 2 with the new data collected on high k and it uses probability density to model the uncertainty associated with the practical application. {\textcopyright} 2004 IEEE",

author = "Wen Luo and Way Kuo and Yue Kuo",

year = "2004",

month = oct,

doi = "10.1109/IRWS.2004.1422771",

language = "English",

isbn = "0-7803-8517-9",

pages = "186--187",

booktitle = "2004 IEEE International Integrated Reliability Workshop Final Report",

publisher = "IEEE",

address = "United States",

note = "2004 IEEE International Integrated Reliability Workshop ; Conference date: 18-10-2004 Through 21-10-2004",

}

TY - GEN

T1 - Bayesian approach to reliability projection for high k dielectric thin films

AU - Luo, Wen

AU - Kuo, Way

AU - Kuo, Yue

PY - 2004/10

Y1 - 2004/10

N2 - A Bayesian statistical approach, which is suitable for reliability estimation and projection of high k dielectric thin films and nano devices, was developed. The essential characteristics of a Bayesian approach is the explicit use of probability for quantifying uncertainty in statistical inference. The model proposed for the reliability projection of high k thin films integrates a lifetime distribution and an empirical acceleration function into a Bayesian hierarchical framework. The advantages of applying the Bayesian approach are two-fold. It can properly combine the prior knowledge of SiO 2 with the new data collected on high k and it uses probability density to model the uncertainty associated with the practical application. © 2004 IEEE

AB - A Bayesian statistical approach, which is suitable for reliability estimation and projection of high k dielectric thin films and nano devices, was developed. The essential characteristics of a Bayesian approach is the explicit use of probability for quantifying uncertainty in statistical inference. The model proposed for the reliability projection of high k thin films integrates a lifetime distribution and an empirical acceleration function into a Bayesian hierarchical framework. The advantages of applying the Bayesian approach are two-fold. It can properly combine the prior knowledge of SiO 2 with the new data collected on high k and it uses probability density to model the uncertainty associated with the practical application. © 2004 IEEE

UR - http://www.scopus.com/inward/record.url?scp=21644442160&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-21644442160&origin=recordpage

U2 - 10.1109/IRWS.2004.1422771

DO - 10.1109/IRWS.2004.1422771

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-8517-9

SP - 186

EP - 187

BT - 2004 IEEE International Integrated Reliability Workshop Final Report

PB - IEEE

T2 - 2004 IEEE International Integrated Reliability Workshop

Y2 - 18 October 2004 through 21 October 2004

ER -

Bayesian approach to reliability projection for high k dielectric thin films

Abstract

Conference

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this