Basal-plane stacking-fault energies of Mg : A first-principles study of Li- and Al-alloying effects

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)693-696
Journal / PublicationScripta Materialia
Volume64
Issue number8
Online published24 Nov 2010
Publication statusPublished - Apr 2011
Externally publishedYes

Abstract

Alloying effects due to Li and Al were examined in terms of generalized stacking-fault energies (GSFEs) associated with basal planes of hexagonal close-packed Mg. The GSFE profiles were obtained using a first-principles technique in combination with climbing-image nudged elastic band methods. Our results show that Li alloying can facilitate dislocation-mediated processes while sequential faulting across basal planes becomes favorable with Al alloying. Such a difference is attributed to the fact that the two alloying elements tend to form different types of bond critical points in Mg. © 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Research Area(s)

  • First-principles electron theory, Generalized stacking-fault energies, Magnesium alloys, Mechanical properties