Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)3354-3359
Journal / PublicationPhysical Review B
Volume24
Issue number6
Publication statusPublished - 1981
Externally publishedYes

Abstract

Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase. © 1981 The American Physical Society.

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Citation Format(s)

Barrier heights and silicide formation for Ni, Pd, and Pt on silicon. / Ottaviani, G.; Tu, K. N.; Mayer, J. W.

In: Physical Review B, Vol. 24, No. 6, 1981, p. 3354-3359.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review