TY - GEN
T1 - Bandwidth Enhanced Doherty Power Amplifier Based on Coupled Phase Compensation Network with Specific Optimal Impedance
AU - Zhou, Xin Yu
AU - Chan, Wing Shing
AU - Feng, Wen Jie
AU - Fang, Xiao Hu
AU - Sharmar, Tushar
AU - Liu, Zheng
PY - 2020/9
Y1 - 2020/9
N2 - This paper presents a new technique to dramatically enhance the bandwidth of a post-matching Doherty power amplifier (PM-DPA). This technique relies on using a coupled-line phase compensation network (PCN). Through a theoretical analysis, we first point out this coupled-line PCN can offer wideband impedance matching due to its capacity in reducing the external Q-factor of the peaking branch. Then, our analysis guides the derivation of closed-form formulas that help to determine the physical parameters of the coupled PCN. Finally, when augmented with suitable selected peaking amplifier impedances, the proposed technique allows improved peak efficiency and output power over extended bandwidth. For experimental verification, A DPA based on commercially available GaN high-electron-mobility transistor (HEMT) devices (Cree CGH 40010F) has been designed and fabricated. Measured results of the proposed DPA shows 6 dB back-off operation between 1.3 - 2.3 GHz (55% fractional bandwidth) with efficiency in excess of 41%.
AB - This paper presents a new technique to dramatically enhance the bandwidth of a post-matching Doherty power amplifier (PM-DPA). This technique relies on using a coupled-line phase compensation network (PCN). Through a theoretical analysis, we first point out this coupled-line PCN can offer wideband impedance matching due to its capacity in reducing the external Q-factor of the peaking branch. Then, our analysis guides the derivation of closed-form formulas that help to determine the physical parameters of the coupled PCN. Finally, when augmented with suitable selected peaking amplifier impedances, the proposed technique allows improved peak efficiency and output power over extended bandwidth. For experimental verification, A DPA based on commercially available GaN high-electron-mobility transistor (HEMT) devices (Cree CGH 40010F) has been designed and fabricated. Measured results of the proposed DPA shows 6 dB back-off operation between 1.3 - 2.3 GHz (55% fractional bandwidth) with efficiency in excess of 41%.
KW - bandwidth enhancement
KW - Doherty power amplifiers
KW - phase compensation network
UR - https://www.scopus.com/pages/publications/85102598078
UR - https://www.scopus.com/pages/publications/85102598078#tab=impact
U2 - 10.1109/IWS49314.2020.9359947
DO - 10.1109/IWS49314.2020.9359947
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781728167046
T3 - IEEE MTT-S International Wireless Symposium, IWS - Proceedings
BT - 2020 IEEE MTT-S International Wireless Symposium (IWS 2020 Online)
PB - IEEE
T2 - The seventh IEEE MTT-S International Wireless Symposium (IEEE IWS 2020)
Y2 - 20 September 2020 through 23 September 2020
ER -