Bandgap engineering of rippled MoS2 monolayer under external electric field

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Jingshan Qi
  • Xiao Li
  • Xiaofeng Qian
  • Ji Feng

Detail(s)

Original languageEnglish
Article number173112
Journal / PublicationApplied Physics Letters
Volume102
Issue number17
Publication statusPublished - 29 Apr 2013
Externally publishedYes

Abstract

In this letter we propose a universal strategy combining external electric field with the ripple of membrane to tune the bandgap of semiconducting atomic monolayer. By first-principles calculations we show that the bandgap of rippled MoS2 monolayer can be tuned in a large range by vertical external electric field, which is expected to have little effect on MoS2 monolayer. This phenomenon can be explained from charge redistribution under external electric field by a simple model. This may open an avenue of optimizing monolayer MoS2 for electronic and optoelectronic applications by surface patterning. © 2013 AIP Publishing LLC.

Citation Format(s)

Bandgap engineering of rippled MoS2 monolayer under external electric field. / Qi, Jingshan; Li, Xiao; Qian, Xiaofeng; Feng, Ji.

In: Applied Physics Letters, Vol. 102, No. 17, 173112, 29.04.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal