Band structure of germanium carbides for direct bandgap photonics

Chad A. Stephenson; William A. O'Brien; Miriam Gillett-Kunnath; Kin Man Yu; Robert Kudrawiec; Roy A. Stillwell; Mark A. Wistey

doi:10.1109/PHOSST.2016.7548543

Band structure of germanium carbides for direct bandgap photonics

Chad A. Stephenson, William A. O'Brien, Miriam Gillett-Kunnath, Kin Man Yu, Robert Kudrawiec, Roy A. Stillwell, Mark A. Wistey^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Ab-initio simulations of dilute germanium carbides (Ge:C) using hybrid functionals predict a direct bandgap with <1% C. Growth of dilute Ge:C shows reduced direct gap consistent with the model, with no structural defects detected. Ge: C may enable lasers and compact modulators on Si.

Original language	English
Title of host publication	2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016
Publisher	IEEE
Pages	53-54
ISBN (Print)	9781509019007
DOIs	https://doi.org/10.1109/PHOSST.2016.7548543
Publication status	Published - 22 Aug 2016
Event	2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016 - Newport Beach, United States Duration: 11 Jul 2016 → 13 Jul 2016

Conference

Conference	2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016
Place	United States
City	Newport Beach
Period	11/07/16 → 13/07/16

Research Keywords

germanium carbides
direct bandgap
silicon photonics
ab initio
band structure

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10.1109/PHOSST.2016.7548543

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@inproceedings{b356d3fbf95243369b08b35771b82633,

title = "Band structure of germanium carbides for direct bandgap photonics",

abstract = "Ab-initio simulations of dilute germanium carbides (Ge:C) using hybrid functionals predict a direct bandgap with <1% C. Growth of dilute Ge:C shows reduced direct gap consistent with the model, with no structural defects detected. Ge: C may enable lasers and compact modulators on Si.",

keywords = "germanium carbides, direct bandgap, silicon photonics, ab initio, band structure",

author = "Stephenson, {Chad A.} and O'Brien, {William A.} and Miriam Gillett-Kunnath and Yu, {Kin Man} and Robert Kudrawiec and Stillwell, {Roy A.} and Wistey, {Mark A.}",

year = "2016",

month = aug,

day = "22",

doi = "10.1109/PHOSST.2016.7548543",

language = "English",

isbn = "9781509019007",

pages = "53--54",

booktitle = "2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016 ; Conference date: 11-07-2016 Through 13-07-2016",

}

Stephenson, CA, O'Brien, WA, Gillett-Kunnath, M, Yu, KM, Kudrawiec, R, Stillwell, RA & Wistey, MA 2016, Band structure of germanium carbides for direct bandgap photonics. in 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016., 7548543, IEEE, pp. 53-54, 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016, Newport Beach, United States, 11/07/16. https://doi.org/10.1109/PHOSST.2016.7548543

Band structure of germanium carbides for direct bandgap photonics. / Stephenson, Chad A.; O'Brien, William A.; Gillett-Kunnath, Miriam et al.
2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016. IEEE, 2016. p. 53-54 7548543.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Band structure of germanium carbides for direct bandgap photonics

AU - Stephenson, Chad A.

AU - O'Brien, William A.

AU - Gillett-Kunnath, Miriam

AU - Yu, Kin Man

AU - Kudrawiec, Robert

AU - Stillwell, Roy A.

AU - Wistey, Mark A.

PY - 2016/8/22

Y1 - 2016/8/22

N2 - Ab-initio simulations of dilute germanium carbides (Ge:C) using hybrid functionals predict a direct bandgap with <1% C. Growth of dilute Ge:C shows reduced direct gap consistent with the model, with no structural defects detected. Ge: C may enable lasers and compact modulators on Si.

AB - Ab-initio simulations of dilute germanium carbides (Ge:C) using hybrid functionals predict a direct bandgap with <1% C. Growth of dilute Ge:C shows reduced direct gap consistent with the model, with no structural defects detected. Ge: C may enable lasers and compact modulators on Si.

KW - germanium carbides

KW - direct bandgap

KW - silicon photonics

KW - ab initio

KW - band structure

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DO - 10.1109/PHOSST.2016.7548543

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781509019007

SP - 53

EP - 54

BT - 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016

PB - IEEE

T2 - 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016

Y2 - 11 July 2016 through 13 July 2016

ER -

Band structure of germanium carbides for direct bandgap photonics

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