@inproceedings{db70bebdb23144fa846769ed76898c0f,
title = "Band gap variation of CdInSe and CdZnS fabricated by high throughput combinatorial growth technique",
abstract = "High energy radiation detector operating at room temperature requires the semiconductors having band-gap energies in the range of 1.35 ∼ 2.5 eV, high Z and high carrier mobility-lifetime (μτ) product. We report here the screening of the band-gap energies of compound semiconductor CdIn2Se4 and ZnCdS doped with Sn and In, prepared by high throughput combinatorial growth technique. It is found that the band-gap energies decrease as [Cd] decreases in Cd1-xIn2+2xSe4+2x, and as In or Sn elements are incorporated in ZnxCd1-xS. For both libraries, the μτ can reach a value on the order of 10-4 cm2/V. These results have demonstrated the strong capability of the combinatorial growth technique in rapid material discovery for room temperature radiation detector applications. {\textcopyright} 2011 American Institute of Physics.",
keywords = "combinatorial technique, mobility and lifetime, semiconductor band-gap",
author = "Ma, {Z. X.} and Hao, {H. Y.} and P. Xiao and Oehlerking, {L. J.} and Liu, {D. F.} and Zhang, {X. J.} and K.-M. Yu and W. Walukiewicz and Mao, {S. S.} and Yu, {P. Y.} and Lei Liu and Yu, {Peter Y.}",
year = "2011",
month = dec,
day = "23",
doi = "10.1063/1.3666742",
language = "English",
isbn = "9780735410022",
volume = "Part A",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics",
number = "1",
pages = "1059--1060",
editor = "Jisoon Ihm and Hyeonsik Cheong",
booktitle = "PHYSICS OF SEMICONDUCTORS",
address = "United States",
note = "30th International Conference on the Physics of Semiconductors (ICPS 2010) ; Conference date: 25-07-2010 Through 30-07-2010",
}