Abstract
The optical energy gap of as-grown MoS2 flakes from chemical vapor deposition can be modulated from 1.86 eV (667 nm) to 1.57 eV (790 nm) by a vapor phase selenization process. This approach, replacing one chalcogen by another in the gas phase, is promising in modulating the optical and electronic properties of other transition metal dichalcogenide monolayers.
| Original language | English |
|---|---|
| Pages (from-to) | 2589-2594 |
| Journal | Small |
| Volume | 10 |
| Issue number | 13 |
| Online published | 7 Mar 2014 |
| DOIs | |
| Publication status | Published - 9 Jul 2014 |
| Externally published | Yes |
Research Keywords
- band gap tuning
- layered materials
- MoS2
- transition metal dichalcogenides
- two-dimensional materials
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