Abstract
We report a band gap bowing parameter for In1-xAlxN of 4.7 eV from a study of high quality and homogenous samples with x=0.017-0.60. Optical absorption data were modeled to extract the band gaps in order to consider the complications of the band structure of In-rich InAlN, including the Burstein-Moss shift, nonparabolic conduction band, and broadening of the absorption edge. The alloy compositions were accurately determined using Rutherford backscattering spectrometry and the sample quality was evaluated using x-ray diffraction and channeling-RBS. © 2008 American Institute of Physics.
| Original language | English |
|---|---|
| Article number | 123501 |
| Journal | Journal of Applied Physics |
| Volume | 104 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2008 |
| Externally published | Yes |
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