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Band gap bowing parameter of In1-xAlxN

R. E. Jones, R. Broesler, K. M. Yu, J. W. Ager III, E. E. Haller, W. Walukiewicz*, X. Chen, W. J. Schaff

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

We report a band gap bowing parameter for In1-xAlxN of 4.7 eV from a study of high quality and homogenous samples with x=0.017-0.60. Optical absorption data were modeled to extract the band gaps in order to consider the complications of the band structure of In-rich InAlN, including the Burstein-Moss shift, nonparabolic conduction band, and broadening of the absorption edge. The alloy compositions were accurately determined using Rutherford backscattering spectrometry and the sample quality was evaluated using x-ray diffraction and channeling-RBS. © 2008 American Institute of Physics.
Original languageEnglish
Article number123501
JournalJournal of Applied Physics
Volume104
Issue number12
DOIs
Publication statusPublished - 2008
Externally publishedYes

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