Band gap bowing parameter of In1-xAlxN

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • R. E. Jones
  • R. Broesler
  • J. W. Ager III
  • E. E. Haller
  • W. Walukiewicz
  • X. Chen
  • W. J. Schaff

Detail(s)

Original languageEnglish
Article number123501
Journal / PublicationJournal of Applied Physics
Volume104
Issue number12
Publication statusPublished - 2008
Externally publishedYes

Abstract

We report a band gap bowing parameter for In1-xAlxN of 4.7 eV from a study of high quality and homogenous samples with x=0.017-0.60. Optical absorption data were modeled to extract the band gaps in order to consider the complications of the band structure of In-rich InAlN, including the Burstein-Moss shift, nonparabolic conduction band, and broadening of the absorption edge. The alloy compositions were accurately determined using Rutherford backscattering spectrometry and the sample quality was evaluated using x-ray diffraction and channeling-RBS. © 2008 American Institute of Physics.

Citation Format(s)

Band gap bowing parameter of In1-xAlxN. / Jones, R. E.; Broesler, R.; Yu, K. M. et al.
In: Journal of Applied Physics, Vol. 104, No. 12, 123501, 2008.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review