Band anticrossing in highly mismatched Snx Ge1-x semiconducting alloys

K. Alberi; J. Blacksberg; L. D. Bell; S. Nikzad; K. M. Yu; O. D. Dubon; W. Walukiewicz

doi:10.1103/PhysRevB.77.073202

Band anticrossing in highly mismatched Snx Ge1-x semiconducting alloys

K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, W. Walukiewicz

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

72 Citations (Scopus)

Abstract

We show that at dilute Sn concentrations (x

Original language	English
Article number	73202
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	77
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.77.073202
Publication status	Published - 8 Feb 2008
Externally published	Yes

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title = "Band anticrossing in highly mismatched Snx Ge1-x semiconducting alloys",

abstract = "We show that at dilute Sn concentrations (x",

author = "K. Alberi and J. Blacksberg and Bell, {L. D.} and S. Nikzad and Yu, {K. M.} and Dubon, {O. D.} and W. Walukiewicz",

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AU - Alberi, K.

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AU - Nikzad, S.

AU - Yu, K. M.

AU - Dubon, O. D.

AU - Walukiewicz, W.

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N2 - We show that at dilute Sn concentrations (x

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DO - 10.1103/PhysRevB.77.073202

M3 - RGC 22 - Publication in policy or professional journal

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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Band anticrossing in highly mismatched Snx Ge1-x semiconducting alloys

Abstract

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