TY - JOUR
T1 - Au6S2 monolayer sheets
T2 - Metallic and semiconducting polymorphs
AU - Wu, Qisheng
AU - Xu, Wen Wu
AU - Qu, Bingyan
AU - Ma, Liang
AU - Niu, Xianghong
AU - Wang, Jinlan
AU - Zeng, Xiao Cheng
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Gold-sulfur interfaces, including self-assembled monolayers of thiol molecules on gold surfaces, thiolate-protected gold nanoclusters, and gold sulfide complexes, have attracted intensive interest due to their promising applications in electrochemistry, bioengineering, and nanocatalysis. Herein, we predict two hitherto unreported two-dimensional (2D) Au6S2 monolayer polymorphs, named as G-Au6S2 and T-Au6S2. The global-minimum G-Au6S2 monolayer can be viewed as a series of [-S-Au-]n and [-Au4-]n chains packed together in parallel. The metastable T-Au6S2 monolayer resembles the widely studied T-MoS2 monolayer structure with each Mo atom substituted with an octahedral Au6 cluster, while the S atom is bonded with three Au atoms in a μ3 bridging mode. The G-Au6S2 monolayer is predicted to be metallic. The T-Au6S2 monolayer is predicted to be a semiconductor with a direct bandgap of 1.48 eV and high carrier mobility of 2721 cm2 V-1 s-1, ∼10 times higher than that of semiconducting H-MoS2. Moreover, the T-Au6S2 monolayer can absorb sunlight efficiently over almost the entire solar spectrum. These properties render the G- and T-Au6S2 monolayers promising materials for advanced applications in microelectronics and optoelectronics.
AB - Gold-sulfur interfaces, including self-assembled monolayers of thiol molecules on gold surfaces, thiolate-protected gold nanoclusters, and gold sulfide complexes, have attracted intensive interest due to their promising applications in electrochemistry, bioengineering, and nanocatalysis. Herein, we predict two hitherto unreported two-dimensional (2D) Au6S2 monolayer polymorphs, named as G-Au6S2 and T-Au6S2. The global-minimum G-Au6S2 monolayer can be viewed as a series of [-S-Au-]n and [-Au4-]n chains packed together in parallel. The metastable T-Au6S2 monolayer resembles the widely studied T-MoS2 monolayer structure with each Mo atom substituted with an octahedral Au6 cluster, while the S atom is bonded with three Au atoms in a μ3 bridging mode. The G-Au6S2 monolayer is predicted to be metallic. The T-Au6S2 monolayer is predicted to be a semiconductor with a direct bandgap of 1.48 eV and high carrier mobility of 2721 cm2 V-1 s-1, ∼10 times higher than that of semiconducting H-MoS2. Moreover, the T-Au6S2 monolayer can absorb sunlight efficiently over almost the entire solar spectrum. These properties render the G- and T-Au6S2 monolayers promising materials for advanced applications in microelectronics and optoelectronics.
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U2 - 10.1039/c7mh00461c
DO - 10.1039/c7mh00461c
M3 - RGC 21 - Publication in refereed journal
SN - 2051-6347
VL - 4
SP - 1085
EP - 1091
JO - Materials Horizons
JF - Materials Horizons
IS - 6
ER -