Auger and A-C impedance studies of the R-F sputter deposited Fe2O3 films
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Pages (from-to) | 421-427 |
Number of pages | 7 |
Journal / Publication | Materials Research Bulletin |
Volume | 18 |
Issue number | 4 |
Publication status | Published - 1983 |
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Abstract
Thin iron oxide films were prepared by r-f sputtering techniques. X-ray diffraction and Auger electron spectoscopic techniques were used to determine the structure of the films. The results showed that the film prepared with such techniques has an α-Fe2O3 structure. A-C impedance techniques were also applied to determine the electrochemical properties of the films. It was found that the flim exhibited semiconducting properties in the borate buffer solution at the anodic potentials below 0.73 V vs. R.H.E.
Citation Format(s)
Auger and A-C impedance studies of the R-F sputter deposited Fe2O3 films. / Tjong, S. C.
In: Materials Research Bulletin, Vol. 18, No. 4, 1983, p. 421-427.
In: Materials Research Bulletin, Vol. 18, No. 4, 1983, p. 421-427.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review