Auger and A-C impedance studies of the R-F sputter deposited Fe2O3 films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)421-427
Number of pages7
Journal / PublicationMaterials Research Bulletin
Volume18
Issue number4
Publication statusPublished - 1983

Abstract

Thin iron oxide films were prepared by r-f sputtering techniques. X-ray diffraction and Auger electron spectoscopic techniques were used to determine the structure of the films. The results showed that the film prepared with such techniques has an α-Fe2O3 structure. A-C impedance techniques were also applied to determine the electrochemical properties of the films. It was found that the flim exhibited semiconducting properties in the borate buffer solution at the anodic potentials below 0.73 V vs. R.H.E.