Auger and A-C impedance studies of the R-F sputter deposited Fe₂O₃ films

Thin iron oxide films were prepared by r-f sputtering techniques. X-ray diffraction and Auger electron spectoscopic techniques were used to determine the structure of the films. The results showed that the film prepared with such techniques has an α-Fe₂O₃ structure. A-C impedance techniques were also applied to determine the electrochemical properties of the films. It was found that the flim exhibited semiconducting properties in the borate buffer solution at the anodic potentials below 0.73 V vs. R.H.E.