Atomistic study of surface vacancy diffusion

L. Zhao; R. Najafabadi; D. J. Srolovitz

doi:10.1557/proc-311-355

Atomistic study of surface vacancy diffusion

L. Zhao, R. Najafabadi, D. J. Srolovitz

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Diffusion of atoms and molecules on surfaces plays an important role in the growth of thin films. In the present study, the surface vacancy diffusion on Cu and Ni (100) and (111) planes is investigated via atomistic simulations. This investigation is performed using the Embedded Atom Method (EAM) interatomic potentials and the finite temperature properties are determined within the local harmonic and quasiharmonic frameworks. This study helps reveal fundamentals of surface vacancy diffusion in the thin film growth. Our results show that the vacancy diffusion is important on (100) surface but it is not the dominant diffusion mechanism on (111) plane.

Original language	English
Title of host publication	Symposium O – Phase Transformations in Thin Films–Thermodynamics
Publisher	Cambridge University Press
Pages	355-360
Volume	311
ISBN (Print)	1558992073
DOIs	https://doi.org/10.1557/proc-311-355
Publication status	Published - Apr 1993
Externally published	Yes
Event	1993 MRS Spring Meeting - San Francisco, United States Duration: 12 Apr 1993 → 16 Apr 1993 https://www.mrs.org/spring1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	311
ISSN (Electronic)	0272-9172

Conference

Conference	1993 MRS Spring Meeting
Place	United States
City	San Francisco
Period	12/04/93 → 16/04/93
Internet address	https://www.mrs.org/spring1993

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title = "Atomistic study of surface vacancy diffusion",

abstract = "Diffusion of atoms and molecules on surfaces plays an important role in the growth of thin films. In the present study, the surface vacancy diffusion on Cu and Ni (100) and (111) planes is investigated via atomistic simulations. This investigation is performed using the Embedded Atom Method (EAM) interatomic potentials and the finite temperature properties are determined within the local harmonic and quasiharmonic frameworks. This study helps reveal fundamentals of surface vacancy diffusion in the thin film growth. Our results show that the vacancy diffusion is important on (100) surface but it is not the dominant diffusion mechanism on (111) plane.",

author = "L. Zhao and R. Najafabadi and Srolovitz, {D. J.}",

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Zhao, L, Najafabadi, R & Srolovitz, DJ 1993, Atomistic study of surface vacancy diffusion. in Symposium O – Phase Transformations in Thin Films–Thermodynamics . vol. 311, Materials Research Society Symposium Proceedings, vol. 311, Cambridge University Press, pp. 355-360, 1993 MRS Spring Meeting, San Francisco, California, United States, 12/04/93. https://doi.org/10.1557/proc-311-355

Atomistic study of surface vacancy diffusion. / Zhao, L.; Najafabadi, R.; Srolovitz, D. J.
Symposium O – Phase Transformations in Thin Films–Thermodynamics . Vol. 311 Cambridge University Press, 1993. p. 355-360 (Materials Research Society Symposium Proceedings; Vol. 311).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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N2 - Diffusion of atoms and molecules on surfaces plays an important role in the growth of thin films. In the present study, the surface vacancy diffusion on Cu and Ni (100) and (111) planes is investigated via atomistic simulations. This investigation is performed using the Embedded Atom Method (EAM) interatomic potentials and the finite temperature properties are determined within the local harmonic and quasiharmonic frameworks. This study helps reveal fundamentals of surface vacancy diffusion in the thin film growth. Our results show that the vacancy diffusion is important on (100) surface but it is not the dominant diffusion mechanism on (111) plane.

AB - Diffusion of atoms and molecules on surfaces plays an important role in the growth of thin films. In the present study, the surface vacancy diffusion on Cu and Ni (100) and (111) planes is investigated via atomistic simulations. This investigation is performed using the Embedded Atom Method (EAM) interatomic potentials and the finite temperature properties are determined within the local harmonic and quasiharmonic frameworks. This study helps reveal fundamentals of surface vacancy diffusion in the thin film growth. Our results show that the vacancy diffusion is important on (100) surface but it is not the dominant diffusion mechanism on (111) plane.

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BT - Symposium O – Phase Transformations in Thin Films–Thermodynamics

PB - Cambridge University Press

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Atomistic study of surface vacancy diffusion

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