Atomistic study of surface vacancy diffusion

L. Zhao, R. Najafabadi, D. J. Srolovitz

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

Diffusion of atoms and molecules on surfaces plays an important role in the growth of thin films. In the present study, the surface vacancy diffusion on Cu and Ni (100) and (111) planes is investigated via atomistic simulations. This investigation is performed using the Embedded Atom Method (EAM) interatomic potentials and the finite temperature properties are determined within the local harmonic and quasiharmonic frameworks. This study helps reveal fundamentals of surface vacancy diffusion in the thin film growth. Our results show that the vacancy diffusion is important on (100) surface but it is not the dominant diffusion mechanism on (111) plane.
Original languageEnglish
Title of host publicationSymposium O – Phase Transformations in Thin Films–Thermodynamics
PublisherCambridge University Press
Pages355-360
Volume311
ISBN (Print)1558992073
DOIs
Publication statusPublished - Apr 1993
Externally publishedYes
Event1993 MRS Spring Meeting - San Francisco, United States
Duration: 12 Apr 199316 Apr 1993
https://www.mrs.org/spring1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume311
ISSN (Electronic)0272-9172

Conference

Conference1993 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco
Period12/04/9316/04/93
Internet address

Fingerprint

Dive into the research topics of 'Atomistic study of surface vacancy diffusion'. Together they form a unique fingerprint.

Cite this