Atomic structure of Si/TbSi2/(111)Si double-heterostructure interfaces

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)5744-5747
Journal / PublicationJournal of Applied Physics
Volume76
Issue number10
Publication statusPublished - Nov 1994
Externally publishedYes

Abstract

High-resolution transmission electron microscopy (HRTEM) has been applied to study the atomic structure of the Si/TbSi2/(111)Si double-heterostructure interfaces. The unrelaxed geometrical models of Si/TbSi2/(111)Si interfaces can be systematically deduced from the dichromatic constrained-coincidence-site-lattice patterns. The atomic structures were determined by comparing HRTEM images with computer-simulated images. The relationships of interface bonding and structures of epitaxial Si/TbSi2 and epitaxial TbSi2/Si interfaces are discussed.

Citation Format(s)

Atomic structure of Si/TbSi2/(111)Si double-heterostructure interfaces. / Luo, C. H.; Chen, F. R.; Chen, L. J.

In: Journal of Applied Physics, Vol. 76, No. 10, 11.1994, p. 5744-5747.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review