Atomic nitrogen chemisorption on graphene with extended line defects

Yu Li, Ji-Chang Ren, Rui-Qin Zhang, Zijing Lin, Michel A. Van Hove

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    15 Citations (Scopus)

    Abstract

    The adsorption of N atoms onto a graphene substrate with extended line defects (ELDs) has been investigated by first-principles calculations. In the presence of recently observed extended line defects, the N adatom can be adsorbed onto both top and bridge sites of the graphene lattice. We demonstrate that chemisorption on ELDs in graphene can substantially affect their structural and electronic properties, depending in particular on specific adsorption sites and density. We also find that magnetism can be induced in ELD-graphene by nitrogenation at suitable N densities; a higher density of N adsorption onto the core carbon atoms of the ELD removes this. © 2012 The Royal Society of Chemistry.
    Original languageEnglish
    Pages (from-to)21167-21172
    JournalJournal of Materials Chemistry
    Volume22
    Issue number39
    DOIs
    Publication statusPublished - 21 Oct 2012

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