Atomic motion of dopant during interfacial silicide formation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)191-195
Journal / PublicationThin Solid Films
Volume104
Issue number1-2
Publication statusPublished - 17 Jun 1983
Externally publishedYes

Abstract

The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides. © 1983.

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Citation Format(s)

Atomic motion of dopant during interfacial silicide formation. / Wittmer, M.; Ting, C. Y.; Tu, K. N.

In: Thin Solid Films, Vol. 104, No. 1-2, 17.06.1983, p. 191-195.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review