Atomic configuration of irradiation-induced planar defects in 3C-SiC
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 121909 |
| Journal / Publication | Applied Physics Letters |
| Volume | 104 |
| Issue number | 12 |
| Publication status | Published - 24 Mar 2014 |
| Externally published | Yes |
Link(s)
Abstract
The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions. © 2014 AIP Publishing LLC.
Citation Format(s)
Atomic configuration of irradiation-induced planar defects in 3C-SiC. / Lin, Y. R.; Ho, C. Y.; Hsieh, C. Y. et al.
In: Applied Physics Letters, Vol. 104, No. 12, 121909, 24.03.2014.
In: Applied Physics Letters, Vol. 104, No. 12, 121909, 24.03.2014.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
