Atomic configuration of irradiation-induced planar defects in 3C-SiC

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

14 Scopus Citations
View graph of relations

Author(s)

  • Y. R. Lin
  • C. Y. Ho
  • C. Y. Hsieh
  • M. T. Chang
  • S. C. Lo
  • F. R. Chen

Detail(s)

Original languageEnglish
Article number121909
Journal / PublicationApplied Physics Letters
Volume104
Issue number12
Publication statusPublished - 24 Mar 2014
Externally publishedYes

Abstract

The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions. © 2014 AIP Publishing LLC.

Citation Format(s)

Atomic configuration of irradiation-induced planar defects in 3C-SiC. / Lin, Y. R.; Ho, C. Y.; Hsieh, C. Y.; Chang, M. T.; Lo, S. C.; Chen, F. R.; Kai, J. J.

In: Applied Physics Letters, Vol. 104, No. 12, 121909, 24.03.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review