Atomic and electronic structures of amorphous ZrO2 and HfO 2 films

Vladimir Gritsenko; Daryja Gritsenko; Sergei Shaimeev; Vladimir Aliev; Kamil Nasyrov; Simon Erenburg; Vladimir Tapilin; Hei Wong; M. C. Poon; J. H. Lee; J. W. Lee; C. W. Kim

doi:10.1016/j.mee.2005.03.056

Atomic and electronic structures of amorphous ZrO2 and HfO 2 films

Vladimir Gritsenko
, Daryja Gritsenko
, Sergei Shaimeev
, Vladimir Aliev
, Kamil Nasyrov
, Simon Erenburg
, Vladimir Tapilin
, Hei Wong
, M. C. Poon
, J. H. Lee
, J. W. Lee
, C. W. Kim

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

41 Citations (Scopus)

Abstract

Atomic and electronic structures of ZrO₂ and HfO₂ films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-deposited films were amorphous and a monoclinic phase was detected after annealing them in ambient at 800 °C. Photoemission results indicated that the ZrO₂ valence band consists of two bands separated by an ionic gap of 6 eV. The lower band of 10 eV width is occupied mainly by O 2s states. EELS results indicated that the bandgap of ZrO₂ and HfO ₂ films are 4.7 and 5.7 eV, respectively. © 2005 Published by Elsevier B.V.

Original language	English
Pages (from-to)	524-529
Journal	Microelectronic Engineering
Volume	81
Issue number	2-4
DOIs	https://doi.org/10.1016/j.mee.2005.03.056
Publication status	Published - Aug 2005
Event	The Proceedings of the 2nd International Symposium on Nano- and Giga-Challenges in Microelectronics - Duration: 12 Sept 2004 → 17 Sept 2004

Research Keywords

Atomic structure
Charge transport
Electronic structure
High-k dielectric

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@article{475e240241104a04b6a2382664d69f5f,

title = "Atomic and electronic structures of amorphous ZrO2 and HfO 2 films",

abstract = "Atomic and electronic structures of ZrO2 and HfO2 films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-deposited films were amorphous and a monoclinic phase was detected after annealing them in ambient at 800 °C. Photoemission results indicated that the ZrO2 valence band consists of two bands separated by an ionic gap of 6 eV. The lower band of 10 eV width is occupied mainly by O 2s states. EELS results indicated that the bandgap of ZrO2 and HfO 2 films are 4.7 and 5.7 eV, respectively. {\textcopyright} 2005 Published by Elsevier B.V.",

keywords = "Atomic structure, Charge transport, Electronic structure, High-k dielectric",

author = "Vladimir Gritsenko and Daryja Gritsenko and Sergei Shaimeev and Vladimir Aliev and Kamil Nasyrov and Simon Erenburg and Vladimir Tapilin and Hei Wong and Poon, \{M. C.\} and Lee, \{J. H.\} and Lee, \{J. W.\} and Kim, \{C. W.\}",

year = "2005",

month = aug,

doi = "10.1016/j.mee.2005.03.056",

language = "English",

volume = "81",

pages = "524--529",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "2-4",

note = "The Proceedings of the 2nd International Symposium on Nano- and Giga-Challenges in Microelectronics ; Conference date: 12-09-2004 Through 17-09-2004",

}

TY - JOUR

T1 - Atomic and electronic structures of amorphous ZrO2 and HfO 2 films

AU - Gritsenko, Vladimir

AU - Gritsenko, Daryja

AU - Shaimeev, Sergei

AU - Aliev, Vladimir

AU - Nasyrov, Kamil

AU - Erenburg, Simon

AU - Tapilin, Vladimir

AU - Wong, Hei

AU - Poon, M. C.

AU - Lee, J. H.

AU - Lee, J. W.

AU - Kim, C. W.

PY - 2005/8

Y1 - 2005/8

N2 - Atomic and electronic structures of ZrO2 and HfO2 films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-deposited films were amorphous and a monoclinic phase was detected after annealing them in ambient at 800 °C. Photoemission results indicated that the ZrO2 valence band consists of two bands separated by an ionic gap of 6 eV. The lower band of 10 eV width is occupied mainly by O 2s states. EELS results indicated that the bandgap of ZrO2 and HfO 2 films are 4.7 and 5.7 eV, respectively. © 2005 Published by Elsevier B.V.

AB - Atomic and electronic structures of ZrO2 and HfO2 films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-deposited films were amorphous and a monoclinic phase was detected after annealing them in ambient at 800 °C. Photoemission results indicated that the ZrO2 valence band consists of two bands separated by an ionic gap of 6 eV. The lower band of 10 eV width is occupied mainly by O 2s states. EELS results indicated that the bandgap of ZrO2 and HfO 2 films are 4.7 and 5.7 eV, respectively. © 2005 Published by Elsevier B.V.

KW - Atomic structure

KW - Charge transport

KW - Electronic structure

KW - High-k dielectric

UR - https://www.scopus.com/pages/publications/23444458761

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-23444458761&origin=recordpage

U2 - 10.1016/j.mee.2005.03.056

DO - 10.1016/j.mee.2005.03.056

M3 - RGC 21 - Publication in refereed journal

SN - 0167-9317

VL - 81

SP - 524

EP - 529

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 2-4

T2 - The Proceedings of the 2nd International Symposium on Nano- and Giga-Challenges in Microelectronics

Y2 - 12 September 2004 through 17 September 2004

ER -

Atomic and electronic structures of amorphous ZrO2 and HfO 2 films

Abstract

Research Keywords

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