Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • R. G. Wilson
  • D. M. Jamba
  • P. K. Chu
  • C. G. Hopkins
  • C. J. Hitzman

Detail(s)

Original languageEnglish
Pages (from-to)2806-2809
Journal / PublicationJournal of Applied Physics
Volume60
Issue number8
Publication statusPublished - 1986
Externally publishedYes

Abstract

Acceptor depth distributions measured using differential capitance-voltage profiling, and atom depth distributions measured using secondary ion mass spectrometry are reported for aluminum implanted in the random and the 〈100〉, 〈110〉, and 〈111〉 directions of the silicon crystal in the ion energy range from 5 to 300 keV, and show agreement between the two measurements for selected energies and with one prior work. Values of range parameters, maximum channeling ranges, and electronic stopping S e are reported.

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