Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
---|---|
Pages (from-to) | 2806-2809 |
Journal / Publication | Journal of Applied Physics |
Volume | 60 |
Issue number | 8 |
Publication status | Published - 1986 |
Externally published | Yes |
Link(s)
Abstract
Acceptor depth distributions measured using differential capitance-voltage profiling, and atom depth distributions measured using secondary ion mass spectrometry are reported for aluminum implanted in the random and the 〈100〉, 〈110〉, and 〈111〉 directions of the silicon crystal in the ion energy range from 5 to 300 keV, and show agreement between the two measurements for selected energies and with one prior work. Values of range parameters, maximum channeling ranges, and electronic stopping S e are reported.
Citation Format(s)
Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation. / Wilson, R. G.; Jamba, D. M.; Chu, P. K.; Hopkins, C. G.; Hitzman, C. J.
In: Journal of Applied Physics, Vol. 60, No. 8, 1986, p. 2806-2809.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review