TY - JOUR
T1 - Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress
AU - Liao, C. N.
AU - Chen, C.
AU - Huang, J. S.
AU - Tu, K. N.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1999/12
Y1 - 1999/12
N2 - With continuing scaling down in microelectronic devices, the current density and the power consumption in the devices must increase. Hence, device reliability under high current density is an issue for ultralarge-scale integration technology. This study investigates the heating behavior of the heavily doped Si channels under high current stress. Thermal and electrical characterization of the channels in bulk Si and in silicon-on-insulator were conducted. An abnormal asymmetrical heating along the channels in bulk Si has been observed. We propose a junction leakage mechanism to explain the phenomenon observed. Other asymmetrical thermal effects, such as electron-hole recombination and Peltier effect, have also been discussed. © 1999 American Institute of Physics.
AB - With continuing scaling down in microelectronic devices, the current density and the power consumption in the devices must increase. Hence, device reliability under high current density is an issue for ultralarge-scale integration technology. This study investigates the heating behavior of the heavily doped Si channels under high current stress. Thermal and electrical characterization of the channels in bulk Si and in silicon-on-insulator were conducted. An abnormal asymmetrical heating along the channels in bulk Si has been observed. We propose a junction leakage mechanism to explain the phenomenon observed. Other asymmetrical thermal effects, such as electron-hole recombination and Peltier effect, have also been discussed. © 1999 American Institute of Physics.
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U2 - 10.1063/1.371769
DO - 10.1063/1.371769
M3 - RGC 21 - Publication in refereed journal
SN - 0021-8979
VL - 86
SP - 6895
EP - 6901
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 12
ER -