Approximation of the length of velocity saturation region in MOSFET's

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)2033-2036
Journal / PublicationIEEE Transactions on Electron Devices
Volume44
Issue number11
Publication statusPublished - 1997

Abstract

This work presents an accurate approximation of the length of velocity saturation region (LVSR) based on the calculation of onedimensional (1-1)1 electric fleld distribution near the drain region of MOSFET's. Results show that for short-channel devices «1 //m), the LVSR values calculated with the new model is much smaller than the conventional approach. The new model agrees well with the MINIMOS simulation results. According to the simulation and theoretical results, the length of velocity saturation region increases gradually with the drain bias and channel length. © 1997 IEEE.