Approximation of the length of velocity saturation region in MOSFET's

This work presents an accurate approximation of the length of velocity saturation region (LVSR) based on the calculation of onedimensional (1-1)1 electric fleld distribution near the drain region of MOSFET's. Results show that for short-channel devices «1 //m), the LVSR values calculated with the new model is much smaller than the conventional approach. The new model agrees well with the MINIMOS simulation results. According to the simulation and theoretical results, the length of velocity saturation region increases gradually with the drain bias and channel length. © 1997 IEEE.