Application of TOF-SIMS to microelectronics

P. K. Chu

Application of TOF-SIMS to microelectronics

P. K. Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a powerful tool for the study of surface chemical contamination. State-of-the-art TOF-SIMS instruments are capable of detection limits in the ppm regime and spatial resolution on the order of 200 nm. This technique is particularly useful for organic studies and depth profiling of shallow structures. Several recent examples will be discussed.

Original language	English
Title of host publication	International Conference on Solid-State and Integrated Circuit Technology Proceedings
Publisher	IEEE
Pages	742-744
Publication status	Published - 1995
Externally published	Yes
Event	4th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 1995) - Beijing International Convention Center, Beijing, China Duration: 24 Oct 1995 → 28 Oct 1995

Conference

Conference	4th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 1995)
Place	China
City	Beijing
Period	24/10/95 → 28/10/95

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@inproceedings{6d8596d78bd34a02bec854d7c4eae675,

title = "Application of TOF-SIMS to microelectronics",

abstract = "Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a powerful tool for the study of surface chemical contamination. State-of-the-art TOF-SIMS instruments are capable of detection limits in the ppm regime and spatial resolution on the order of 200 nm. This technique is particularly useful for organic studies and depth profiling of shallow structures. Several recent examples will be discussed.",

author = "Chu, \{P. K.\}",

year = "1995",

language = "English",

pages = "742--744",

booktitle = "International Conference on Solid-State and Integrated Circuit Technology Proceedings",

publisher = "IEEE",

address = "United States",

note = "4th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 1995) ; Conference date: 24-10-1995 Through 28-10-1995",

}

TY - GEN

T1 - Application of TOF-SIMS to microelectronics

AU - Chu, P. K.

PY - 1995

Y1 - 1995

N2 - Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a powerful tool for the study of surface chemical contamination. State-of-the-art TOF-SIMS instruments are capable of detection limits in the ppm regime and spatial resolution on the order of 200 nm. This technique is particularly useful for organic studies and depth profiling of shallow structures. Several recent examples will be discussed.

AB - Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a powerful tool for the study of surface chemical contamination. State-of-the-art TOF-SIMS instruments are capable of detection limits in the ppm regime and spatial resolution on the order of 200 nm. This technique is particularly useful for organic studies and depth profiling of shallow structures. Several recent examples will be discussed.

UR - https://www.scopus.com/pages/publications/0029453170

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0029453170&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SP - 742

EP - 744

BT - International Conference on Solid-State and Integrated Circuit Technology Proceedings

PB - IEEE

T2 - 4th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 1995)

Y2 - 24 October 1995 through 28 October 1995

ER -

Application of TOF-SIMS to microelectronics

Abstract

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