Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • K. T. Sung
  • W. Q. Li
  • S. H. Li
  • S. W. Pang
  • P. K. Bhattacharya

Detail(s)

Original languageEnglish
Pages (from-to)277-278
Journal / PublicationElectronics Letters
Volume29
Issue number3
Publication statusPublished - 4 Feb 1993
Externally publishedYes

Abstract

A 5 nm-thick SiO2 gate was grown on an Si (p+)/Si0.8Ge0.2 modulation-doped heterostructure at 26°C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field > 12 MV/cm and fixed charge density approx. 3 × 1010 cm-2. Leakage current as low as 1 μA was obtained with the gate biased at 4 V. The MISFET with 0.25 × 25 μm2 gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

Citation Format(s)

Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET. / Sung, K. T.; Li, W. Q.; Li, S. H.; Pang, S. W.; Bhattacharya, P. K.

In: Electronics Letters, Vol. 29, No. 3, 04.02.1993, p. 277-278.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review