Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

K. T. Sung; W. Q. Li; S. H. Li; S. W. Pang; P. K. Bhattacharya

doi:10.1049/el:19930189

Application of high-quality SiO₂ grown by multipolar ECR source to Si/SiGe MISFET

K. T. Sung
, W. Q. Li
, S. H. Li
, S. W. Pang
, P. K. Bhattacharya

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

3 Citations (Scopus)

Abstract

A 5 nm-thick SiO₂ gate was grown on an Si (p⁺)/Si_0.8Ge_0.2 modulation-doped heterostructure at 26°C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field > 12 MV/cm and fixed charge density approx. 3 × 10¹⁰ cm^-2. Leakage current as low as 1 μA was obtained with the gate biased at 4 V. The MISFET with 0.25 × 25 μm² gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

Original language	English
Pages (from-to)	277-278
Journal	Electronics Letters
Volume	29
Issue number	3
DOIs	https://doi.org/10.1049/el:19930189
Publication status	Published - 4 Feb 1993
Externally published	Yes

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@article{93c571b4b179428eb0f1004b808a7f56,

title = "Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET",

abstract = "A 5 nm-thick SiO2 gate was grown on an Si (p+)/Si0.8Ge0.2 modulation-doped heterostructure at 26°C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field > 12 MV/cm and fixed charge density approx. 3 × 1010 cm-2. Leakage current as low as 1 μA was obtained with the gate biased at 4 V. The MISFET with 0.25 × 25 μm2 gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.",

author = "Sung, \{K. T.\} and Li, \{W. Q.\} and Li, \{S. H.\} and Pang, \{S. W.\} and Bhattacharya, \{P. K.\}",

year = "1993",

month = feb,

day = "4",

doi = "10.1049/el:19930189",

language = "English",

volume = "29",

pages = "277--278",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons",

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}

TY - JOUR

T1 - Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

AU - Sung, K. T.

AU - Li, W. Q.

AU - Li, S. H.

AU - Pang, S. W.

AU - Bhattacharya, P. K.

PY - 1993/2/4

Y1 - 1993/2/4

N2 - A 5 nm-thick SiO2 gate was grown on an Si (p+)/Si0.8Ge0.2 modulation-doped heterostructure at 26°C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field > 12 MV/cm and fixed charge density approx. 3 × 1010 cm-2. Leakage current as low as 1 μA was obtained with the gate biased at 4 V. The MISFET with 0.25 × 25 μm2 gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

AB - A 5 nm-thick SiO2 gate was grown on an Si (p+)/Si0.8Ge0.2 modulation-doped heterostructure at 26°C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field > 12 MV/cm and fixed charge density approx. 3 × 1010 cm-2. Leakage current as low as 1 μA was obtained with the gate biased at 4 V. The MISFET with 0.25 × 25 μm2 gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

UR - https://www.scopus.com/pages/publications/0027908304

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0027908304&origin=recordpage

U2 - 10.1049/el:19930189

DO - 10.1049/el:19930189

M3 - RGC 21 - Publication in refereed journal

SN - 0013-5194

VL - 29

SP - 277

EP - 278

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -