Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits

You Meng, Weijun Wang, Wei Wang, Bowen Li, Yuxuan Zhang, Johnny Ho*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

28 Citations (Scopus)

Abstract

Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized. © 2023 Wiley-VCH GmbH.
Original languageEnglish
Article number2306290
JournalAdvanced Materials
Volume36
Issue number17
Online published14 Aug 2023
DOIs
Publication statusPublished - 25 Apr 2024

Funding

M.Y., W.W.J., and W.W. contributed equally to this work. This research received financial support from a fellowship award of the Research Grants Council of the Hong Kong Special Administrative Region, China (CityU RFS2021-1S04). Additional support was provided by the Shenzhen Municipality Science and Technology Innovation Commission (grant no. SGDX2020110309300402; “Modulation and Detection of Terahertz Waves based on Semi-Metallic Two-Dimensional Materials,” CityU) and the Foshan Innovative and Entrepreneurial Research Team Program (No. 2018IT100031).

Research Keywords

  • anti-ambipolar transistors
  • heterojunctions
  • homojunctions
  • multivalued logic circuits
  • negative differential transconductance

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