TY - JOUR
T1 - Anti-Ambipolar Heterojunctions
T2 - Materials, Devices, and Circuits
AU - Meng, You
AU - Wang, Weijun
AU - Wang, Wei
AU - Li, Bowen
AU - Zhang, Yuxuan
AU - Ho, Johnny
PY - 2024/4/25
Y1 - 2024/4/25
N2 - Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized. © 2023 Wiley-VCH GmbH.
AB - Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized. © 2023 Wiley-VCH GmbH.
KW - anti-ambipolar transistors
KW - heterojunctions
KW - homojunctions
KW - multivalued logic circuits
KW - negative differential transconductance
UR - http://www.scopus.com/inward/record.url?scp=85178042496&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85178042496&origin=recordpage
U2 - 10.1002/adma.202306290
DO - 10.1002/adma.202306290
M3 - RGC 21 - Publication in refereed journal
SN - 0935-9648
VL - 36
JO - Advanced Materials
JF - Advanced Materials
IS - 17
M1 - 2306290
ER -