Anomalous polarization switching in organic ferroelectric field effect transistors

C. A. Nguyen; P. S. Lee; N. Ng; H. Su; S. G. Mhaisalkar; J. Ma; F. Y. C. Boey

doi:10.1063/1.2757092

Anomalous polarization switching in organic ferroelectric field effect transistors

C. A. Nguyen^*
, P. S. Lee^*
, N. Ng
, H. Su
, S. G. Mhaisalkar
, J. Ma
, F. Y. C. Boey

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

17 Citations (Scopus)

Abstract

The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors. © 2007 American Institute of Physics.

Original language	English
Article number	042909
Journal	Applied Physics Letters
Volume	91
Issue number	4
DOIs	https://doi.org/10.1063/1.2757092
Publication status	Published - 23 Jul 2007
Externally published	Yes

Funding

One of the authors (C.A.N.) would like to acknowledge the research scholarship awarded by Nanyang Technological University. This work is supported by A* Star under Grant No. 0521170032 and NTU Acrf Grant No. RG26/05.

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title = "Anomalous polarization switching in organic ferroelectric field effect transistors",

abstract = "The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors. {\textcopyright} 2007 American Institute of Physics.",

author = "Nguyen, \{C. A.\} and Lee, \{P. S.\} and N. Ng and H. Su and Mhaisalkar, \{S. G.\} and J. Ma and Boey, \{F. Y. C.\}",

year = "2007",

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doi = "10.1063/1.2757092",

language = "English",

volume = "91",

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TY - JOUR

T1 - Anomalous polarization switching in organic ferroelectric field effect transistors

AU - Nguyen, C. A.

AU - Lee, P. S.

AU - Ng, N.

AU - Su, H.

AU - Mhaisalkar, S. G.

AU - Ma, J.

AU - Boey, F. Y. C.

PY - 2007/7/23

Y1 - 2007/7/23

N2 - The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors. © 2007 American Institute of Physics.

AB - The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors. © 2007 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/34547452245

UR - https://www.scopus.com/pages/publications/34547452245#tab=impact

U2 - 10.1063/1.2757092

DO - 10.1063/1.2757092

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042909

ER -

Anomalous polarization switching in organic ferroelectric field effect transistors

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