Annealing-induced changes in the nanoscale electrical homogeneity of bismuth ferrite dielectric thin films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Yuan-Chang Liang
  • W. S. Chen
  • Chia-Yen Hu
  • Chiem-Lum Huang
  • W. Kai

Detail(s)

Original languageEnglish
Pages (from-to)2391-2396
Journal / PublicationCeramics International
Volume37
Issue number7
Publication statusPublished - Sep 2011
Externally publishedYes

Abstract

In this study, we investigated the effects of forming gas (7% H2 + 93% Ar) annealing (FGA) and recovery annealing (RA) in ambient oxygen on the structure and electrical properties of BiFeO3 (BFO) thin films. X-ray diffraction results indicate that BFO remains in the perovskite phase following FGA. However, the spatial distribution of current maps obtained by conductive atomic force microscopy shows that FGA-treated BFO thin films are less electrically insulating than those without prepared thermal annealing. Recovery annealing improves the structural and chemical homogeneity of the FGA-treated films, thereby increasing the electrical resistance of the films. © 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Research Area(s)

  • A. Films, B. Defects, B. Surfaces, C. Electrical properties, D. Perovskites

Bibliographic Note

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Citation Format(s)

Annealing-induced changes in the nanoscale electrical homogeneity of bismuth ferrite dielectric thin films. / Liang, Yuan-Chang; Chen, W. S.; Hu, Chia-Yen; Huang, Chiem-Lum; Kai, W.

In: Ceramics International, Vol. 37, No. 7, 09.2011, p. 2391-2396.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review