Annealing of ion implant damage in the high-temperature superconductor YBa2Cu3O7-x

A. D. Marwick; G. J. Clark; K. N. Tu; D. S. Yee; C. Lee; U. N. Singh; J. Doyle; J. J. Cuomo

doi:10.1016/0168-583X(89)91058-6

Annealing of ion implant damage in the high-temperature superconductor YBa₂Cu₃O_7-x

A. D. Marwick
, G. J. Clark
, K. N. Tu
, D. S. Yee
, C. Lee
, U. N. Singh
, J. Doyle
, J. J. Cuomo

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

It was found that the increase in room-temperature resistivity caused by ion bombardment damage in YBa₂Cu₃O_7-x could be completely recovered by annealing if the damage dose was small. A small resistivity increment (~ 0.2%), caused by a very small ion dose, annealed at room temperature. For a larger ion dose, sufficient to double the resistivity, complete recovery of room-temperature resistivity was produced by annealing at 500 °C in O₂, but recovery after still larger doses was incomplete. © 1989.

Original language	English
Pages (from-to)	612-614
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	40-41
Issue number	PART 1
DOIs	https://doi.org/10.1016/0168-583X(89)91058-6
Publication status	Published - 2 Apr 1989
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{74dd36a9421d4373bc6e52cb5476ffa0,

title = "Annealing of ion implant damage in the high-temperature superconductor YBa2Cu3O7-x",

abstract = "It was found that the increase in room-temperature resistivity caused by ion bombardment damage in YBa2Cu3O7-x could be completely recovered by annealing if the damage dose was small. A small resistivity increment (\textasciitilde{} 0.2\%), caused by a very small ion dose, annealed at room temperature. For a larger ion dose, sufficient to double the resistivity, complete recovery of room-temperature resistivity was produced by annealing at 500 °C in O2, but recovery after still larger doses was incomplete. {\textcopyright} 1989.",

author = "Marwick, \{A. D.\} and Clark, \{G. J.\} and Tu, \{K. N.\} and Yee, \{D. S.\} and C. Lee and Singh, \{U. N.\} and J. Doyle and Cuomo, \{J. J.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1989",

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language = "English",

volume = "40-41",

pages = "612--614",

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}

TY - JOUR

T1 - Annealing of ion implant damage in the high-temperature superconductor YBa2Cu3O7-x

AU - Marwick, A. D.

AU - Clark, G. J.

AU - Tu, K. N.

AU - Yee, D. S.

AU - Lee, C.

AU - Singh, U. N.

AU - Doyle, J.

AU - Cuomo, J. J.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1989/4/2

Y1 - 1989/4/2

N2 - It was found that the increase in room-temperature resistivity caused by ion bombardment damage in YBa2Cu3O7-x could be completely recovered by annealing if the damage dose was small. A small resistivity increment (~ 0.2%), caused by a very small ion dose, annealed at room temperature. For a larger ion dose, sufficient to double the resistivity, complete recovery of room-temperature resistivity was produced by annealing at 500 °C in O2, but recovery after still larger doses was incomplete. © 1989.

AB - It was found that the increase in room-temperature resistivity caused by ion bombardment damage in YBa2Cu3O7-x could be completely recovered by annealing if the damage dose was small. A small resistivity increment (~ 0.2%), caused by a very small ion dose, annealed at room temperature. For a larger ion dose, sufficient to double the resistivity, complete recovery of room-temperature resistivity was produced by annealing at 500 °C in O2, but recovery after still larger doses was incomplete. © 1989.

UR - https://www.scopus.com/pages/publications/0024645545

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0024645545&origin=recordpage

U2 - 10.1016/0168-583X(89)91058-6

DO - 10.1016/0168-583X(89)91058-6

M3 - RGC 21 - Publication in refereed journal

SN - 0168-583X

VL - 40-41

SP - 612

EP - 614

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - PART 1

ER -