Annealing induced saturation in electron concentration for v-doped cdo

Yajie Li; Guibin Chen; Kinman Yu; Wladyslaw Walukiewicz; Weiping Gong

doi:10.3390/cryst11091079

Annealing induced saturation in electron concentration for v-doped cdo

Yajie Li^*, Guibin Chen, Kinman Yu, Wladyslaw Walukiewicz, Weiping Gong

^*Corresponding author for this work

Department of Physics

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

As-grown Ar-deposited Cd_1−xV_xO and Ar/O₂-deposited Cd_1−yV_yO feature lower and higher electron concentrations than 4 × 10²⁰ cm⁻³, respectively. After isothermal and isochronal annealing under N₂ ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 10²⁰ cm⁻³ which is close to Fermi stabilization energy (E_FS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.

Original language	English
Article number	1079
Journal	Crystals
Volume	11
Issue number	9
Online published	6 Sept 2021
DOIs	https://doi.org/10.3390/cryst11091079
Publication status	Published - Sept 2021

Research Keywords

Amphoteric defects model
Fermi stabilization energy
Hall Effect properties
Rapid thermal annealing

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This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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title = "Annealing induced saturation in electron concentration for v-doped cdo",

abstract = "As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower and higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal and isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 1020 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.",

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author = "Yajie Li and Guibin Chen and Kinman Yu and Wladyslaw Walukiewicz and Weiping Gong",

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doi = "10.3390/cryst11091079",

language = "English",

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T1 - Annealing induced saturation in electron concentration for v-doped cdo

AU - Li, Yajie

AU - Chen, Guibin

AU - Yu, Kinman

AU - Walukiewicz, Wladyslaw

AU - Gong, Weiping

PY - 2021/9

Y1 - 2021/9

N2 - As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower and higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal and isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 1020 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.

AB - As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower and higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal and isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 1020 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.

KW - Amphoteric defects model

KW - Fermi stabilization energy

KW - Hall Effect properties

KW - Rapid thermal annealing

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U2 - 10.3390/cryst11091079

DO - 10.3390/cryst11091079

M3 - RGC 21 - Publication in refereed journal

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VL - 11

JO - Crystals

JF - Crystals

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Annealing induced saturation in electron concentration for v-doped cdo

Abstract

Research Keywords

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