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Annealing-dependent growth and nonlinear electrical properties of fractal Ge nanojoints based on Pd matrix

Linggui Hou, Peng Liu, Zhiwen Chen, Wenfeng Wang, Chan-Hung Shek, C. M. Lawrence Wu, Joseph K.L. Lai

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    The Pd/Ge bilayer films with interesting fractal Ge nanojoints were successfully prepared by high-vacuum thermal evaporation techniques. It was found that Ge nanojoints embedded in Pd matrix showed fascinating fractal morphologies with average size of fractal clusters at 3.5 μm and fractal dimension at 1.77 when the films were annealed at 550 C for 15 min. The fractal clusters formed Ge nanojoints with average size at 80 nm in width and 450 nm in length. The annealing-dependent growth model responsible for the fractal Ge nanojoints is discussed reasonably. The electrical measurements confirmed that the annealed Pd/Ge film with interesting fractal clusters showed a nonlinear voltage-current behavior. © 2013 Elsevier B.V.
    Original languageEnglish
    Pages (from-to)29-33
    JournalMaterials Letters
    Volume115
    DOIs
    Publication statusPublished - 2014

    Research Keywords

    • Electrical properties
    • Fractals
    • Nanojoints
    • Thin films

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