Angled broad-area semiconductor lasers to emit high output power with good beam quality

Yi-Shin Su; Chih-Hung Tsai; Chia-Wei Tsai; D.P. Tsai; Ching-Fuh Lin

doi:10.1117/12.525576

Angled broad-area semiconductor lasers to emit high output power with good beam quality

Yi-Shin Su, Chih-Hung Tsai, Chia-Wei Tsai, D.P. Tsai, Ching-Fuh Lin

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

A new type of laser diodes with good beam quality is introduced. The far-field divergence angle can be close to diffraction-limited value. In the new design, the direction of the waveguide on a broad area Fabry-Perot laser diode is tilted at an angle from the facet normal. This design is called "angled broad area laser diode". In this tilted waveguide device, filamentation is not observed. The far-field divergence angle is generally within 5 times the diffraction-limited value. This tilted broad area laser is advantageous over the angled grating DFB laser because the difficulty of matching the grating period with peak gain wavelength is avoided.

Original language	English
Title of host publication	Novel In-Plane Semiconductor Lasers III
Editors	Claire F. Gmachl, David P. Bour
Publisher	SPIE
Pages	133-141
DOIs	https://doi.org/10.1117/12.525576
Publication status	Published - 2004
Externally published	Yes
Event	Integrated Optoelectronic Devices 2004 - San Jose, CA, United States Duration: 26 Jan 2004 → 29 Jan 2004 https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5350.toc

Publication series

Name	Proceedings of SPIE
Volume	5365
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Integrated Optoelectronic Devices 2004
Place	United States
City	San Jose, CA
Period	26/01/04 → 29/01/04
Internet address	https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5350.toc

Research Keywords

Angled broad area laser
Angled grating dfb laser
Filamentation
High power laser diode
Indium phosphide

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@inproceedings{b1159d74baf040b7985bbcbd627a820c,

title = "Angled broad-area semiconductor lasers to emit high output power with good beam quality",

abstract = "A new type of laser diodes with good beam quality is introduced. The far-field divergence angle can be close to diffraction-limited value. In the new design, the direction of the waveguide on a broad area Fabry-Perot laser diode is tilted at an angle from the facet normal. This design is called {"}angled broad area laser diode{"}. In this tilted waveguide device, filamentation is not observed. The far-field divergence angle is generally within 5 times the diffraction-limited value. This tilted broad area laser is advantageous over the angled grating DFB laser because the difficulty of matching the grating period with peak gain wavelength is avoided.",

keywords = "Angled broad area laser, Angled grating dfb laser, Filamentation, High power laser diode, Indium phosphide",

author = "Yi-Shin Su and Chih-Hung Tsai and Chia-Wei Tsai and D.P. Tsai and Ching-Fuh Lin",

year = "2004",

doi = "10.1117/12.525576",

language = "English",

series = "Proceedings of SPIE",

publisher = "SPIE",

pages = "133--141",

editor = "Gmachl, {Claire F.} and Bour, {David P.}",

booktitle = "Novel In-Plane Semiconductor Lasers III",

address = "United States",

note = "Integrated Optoelectronic Devices 2004 ; Conference date: 26-01-2004 Through 29-01-2004",

url = "https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5350.toc",

}

Su, Y-S, Tsai, C-H, Tsai, C-W, Tsai, DP & Lin, C-F 2004, Angled broad-area semiconductor lasers to emit high output power with good beam quality. in CF Gmachl & DP Bour (eds), Novel In-Plane Semiconductor Lasers III. Proceedings of SPIE, vol. 5365, SPIE, pp. 133-141, Integrated Optoelectronic Devices 2004, San Jose, CA, United States, 26/01/04. https://doi.org/10.1117/12.525576

Angled broad-area semiconductor lasers to emit high output power with good beam quality. / Su, Yi-Shin; Tsai, Chih-Hung; Tsai, Chia-Wei et al.
Novel In-Plane Semiconductor Lasers III. ed. / Claire F. Gmachl; David P. Bour. SPIE, 2004. p. 133-141 (Proceedings of SPIE; Vol. 5365).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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AU - Su, Yi-Shin

AU - Tsai, Chih-Hung

AU - Tsai, Chia-Wei

AU - Tsai, D.P.

AU - Lin, Ching-Fuh

PY - 2004

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N2 - A new type of laser diodes with good beam quality is introduced. The far-field divergence angle can be close to diffraction-limited value. In the new design, the direction of the waveguide on a broad area Fabry-Perot laser diode is tilted at an angle from the facet normal. This design is called "angled broad area laser diode". In this tilted waveguide device, filamentation is not observed. The far-field divergence angle is generally within 5 times the diffraction-limited value. This tilted broad area laser is advantageous over the angled grating DFB laser because the difficulty of matching the grating period with peak gain wavelength is avoided.

AB - A new type of laser diodes with good beam quality is introduced. The far-field divergence angle can be close to diffraction-limited value. In the new design, the direction of the waveguide on a broad area Fabry-Perot laser diode is tilted at an angle from the facet normal. This design is called "angled broad area laser diode". In this tilted waveguide device, filamentation is not observed. The far-field divergence angle is generally within 5 times the diffraction-limited value. This tilted broad area laser is advantageous over the angled grating DFB laser because the difficulty of matching the grating period with peak gain wavelength is avoided.

KW - Angled broad area laser

KW - Angled grating dfb laser

KW - Filamentation

KW - High power laser diode

KW - Indium phosphide

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Angled broad-area semiconductor lasers to emit high output power with good beam quality

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