Analytical modeling on the drain current characteristics of gate-all-around TFET with the incorporation of short-channel effects

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

3 Scopus Citations
View graph of relations

Author(s)

  • Wanjie Xu
  • Hei Wong
  • Hiroshi Iwai
  • Jun Liu
  • Pei Qin

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)24-29
Journal / PublicationSolid-State Electronics
Volume138
Online published11 Jul 2017
Publication statusPublished - Dec 2017

Abstract

An analytical model for describing the drain current characteristics of gate-all-around (GAA) tunneling field-effect transistor (TFET) is developed. Starting from potential distribution derived from Poisson's equation in different regions along the channel, drain current model is developed based on Kane's approach. The new model shows a better accuracy than the previously reported models. It is valid for larger ranges of bias conditions and channel length also. In particular, we have taken the effect of drain bias on the source junction tunneling into account. This effect is quite significant for the subthreshold conduction of short-channel devices. The validity of this model has been confirmed with TCAD simulation.