Analytical modeling of reservoir effect on electromigration in Cu interconnects

Zhenghao Gan; A. M. Gusak; W. Shao; Zhong Chen; S. G. Mhaisalkar; T. Zaporozhets; K. N. Tu

doi:10.1557/jmr.2007.0001

Analytical modeling of reservoir effect on electromigration in Cu interconnects

Zhenghao Gan^*, A. M. Gusak, W. Shao, Zhong Chen, S. G. Mhaisalkar, T. Zaporozhets, K. N. Tu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model. © 2007 Materials Research Society.

Original language	English
Pages (from-to)	152-156
Journal	Journal of Materials Research
Volume	22
Issue number	1
DOIs	https://doi.org/10.1557/jmr.2007.0001
Publication status	Published - Jan 2007
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Analytical modeling of reservoir effect on electromigration in Cu interconnects",

abstract = "Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model. {\textcopyright} 2007 Materials Research Society.",

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T1 - Analytical modeling of reservoir effect on electromigration in Cu interconnects

AU - Gan, Zhenghao

AU - Gusak, A. M.

AU - Shao, W.

AU - Chen, Zhong

AU - Mhaisalkar, S. G.

AU - Zaporozhets, T.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2007/1

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N2 - Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model. © 2007 Materials Research Society.

AB - Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model. © 2007 Materials Research Society.

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DO - 10.1557/jmr.2007.0001

M3 - RGC 21 - Publication in refereed journal

SN - 0884-2914

VL - 22

SP - 152

EP - 156

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 1

ER -

Analytical modeling of reservoir effect on electromigration in Cu interconnects

Abstract

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