Analytical modeling of reservoir effect on electromigration in Cu interconnects

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

4 Scopus Citations
View graph of relations

Author(s)

  • Zhenghao Gan
  • A. M. Gusak
  • W. Shao
  • Zhong Chen
  • S. G. Mhaisalkar
  • T. Zaporozhets

Detail(s)

Original languageEnglish
Pages (from-to)152-156
Journal / PublicationJournal of Materials Research
Volume22
Issue number1
Publication statusPublished - Jan 2007
Externally publishedYes

Abstract

Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model. © 2007 Materials Research Society.

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Citation Format(s)

Analytical modeling of reservoir effect on electromigration in Cu interconnects. / Gan, Zhenghao; Gusak, A. M.; Shao, W. et al.
In: Journal of Materials Research, Vol. 22, No. 1, 01.2007, p. 152-156.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review