Analytical modeling of reservoir effect on electromigration in Cu interconnects
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 152-156 |
Journal / Publication | Journal of Materials Research |
Volume | 22 |
Issue number | 1 |
Publication status | Published - Jan 2007 |
Externally published | Yes |
Link(s)
Abstract
Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model. © 2007 Materials Research Society.
Research Area(s)
Bibliographic Note
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Citation Format(s)
Analytical modeling of reservoir effect on electromigration in Cu interconnects. / Gan, Zhenghao; Gusak, A. M.; Shao, W. et al.
In: Journal of Materials Research, Vol. 22, No. 1, 01.2007, p. 152-156.
In: Journal of Materials Research, Vol. 22, No. 1, 01.2007, p. 152-156.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review